公开(公告)号：US20150155830A1

公开(公告)日：2015-06-04

申请号：US14559898

申请日：2014-12-03

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： JOSEPH STAUDINGER ,  HUGUES BEAULATON ,  DAMON G. HOLMES ,  JEAN-CHRISTOPHE NANAN

IPC: H03F1/02 ,  H03F3/19 ,  H03F3/217

CPC classification number: H03F1/0205 ,  H03F3/189 ,  H03F3/19 ,  H03F3/211 ,  H03F3/2171 ,  H03F3/2175 ,  H03F3/2176 ,  H03F3/2178 ,  H03F3/245 ,  H03F3/30 ,  H03F3/602 ,  H03F3/72 ,  H03F2200/09 ,  H03F2200/171 ,  H03F2200/451 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/21106 ,  H03F2203/21142

Abstract: An embodiment of an amplifier includes N (N>1) switch-mode power amplifier (SMPA) branches. Each SMPA branch includes two drive signal inputs and one SMPA branch output. A module coupled to the amplifier samples an input RF signal, and produces combinations of drive signals based on the samples. When an SMPA branch receives a first combination of drive signals, it produces an output signal at one voltage level. Conversely, when the SMPA branch receives a different second combination of drive signals, it produces the output signal at another voltage level. At least two of the SMPA branches produce output signals having different absolute magnitudes. A combiner combines the output signals from all of the SMPA branches to produce a combined output signal that may have, at any given time, one of 2*N+1 quantization states.

Abstract translation: 放大器的一个实施例包括N（N> 1）个开关模式功率放大器（SMPA）分支。 每个SMPA分支包括两个驱动信号输入和一个SMPA分支输出。 耦合到放大器的模块对输入RF信号进行采样，并且基于样本产生驱动信号的组合。 当SMPA分支接收到驱动信号的第一组合时，它产生一个电压电平的输出信号。 相反，当SMPA分支接收到不同的驱动信号的第二组合时，它产生另一个电压电平的输出信号。 至少两个SMPA分支产生具有不同绝对值的输出信号。 组合器组合来自所有SMPA分支的输出信号以产生在任何给定时间可以具有2×N + 1个量化状态之一的组合输出信号。

公开(公告)号：US20170117856A1

公开(公告)日：2017-04-27

申请号：US14919511

申请日：2015-10-21

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： NING ZHU ,  DAMON G. HOLMES ,  JEFFREY K. JONES

IPC: H03F1/56 ,  H03F3/19

CPC classification number: H03F1/565 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03F3/19 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/309 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/402 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2200/75 ,  H01L2924/00014

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.