公开(公告)号：US20230101156A1

公开(公告)日：2023-03-30

申请号：US17893303

申请日：2022-08-23

Applicant: FUJIFILM Corporation

Inventor： Kohei HAYASHI ,  Tomonori TAKAHASHI

IPC: C09K13/06 ,  C09K13/08 ,  C11D11/00 ,  C11D1/65

Abstract: A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

公开(公告)号：US20250019836A1

公开(公告)日：2025-01-16

申请号：US18889891

申请日：2024-09-19

Applicant: FUJIFILM Corporation

Inventor： Kohei HAYASHI ,  Moe NARITA ,  Atsushi MIZUTANI

IPC: C23F11/12 ,  C23F11/04

Abstract: An object of the present invention is to provide a treatment liquid that has excellent removability of a metal part and suppressed dissolution of an insulating film in a case of being applied to an object to be treated, including the insulating film and the metal part. The treatment liquid of an embodiment of the present invention includes water, a fluoride source, periodic acid or a salt thereof, and a surfactant, and satisfies at least one of the following requirement A, the following requirement B, or the following requirement C.
Requirement A: The surfactant includes a cationic surfactant and has a predetermined aliphatic hydrocarbon group, and the cationic surfactant has a molecular weight of 300 or less.
Requirement B: The surfactant includes an anionic surfactant, the anionic surfactant has a predetermined group, and a mass ratio of a content of the anionic surfactant to a content of the fluoride source is 0.01 to 0.5.
Requirement C: The surfactant includes a nonionic surfactant, and the nonionic surfactant does not have a fluorine atom and is represented by a predetermined formula.

公开(公告)号：US20220275519A1

公开(公告)日：2022-09-01

申请号：US17748536

申请日：2022-05-19

Applicant: FUJIFILM Corporation

Inventor： Kohei HAYASHI ,  Tetsuya KAMIMURA

IPC: C23G1/14 ,  C11D1/75 ,  C11D1/18 ,  C11D3/04

Abstract: An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.