公开(公告)号：US20140186988A1

公开(公告)日：2014-07-03

申请号：US14196338

申请日：2014-03-04

Applicant: FUJIFILM Corporation

Inventor： Tetsuo KAWANO ,  Hiroshi ARAI

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0296 ,  H01L31/0749 ,  Y02E10/541

Abstract: A chemical bath deposition apparatus includes: a reaction vessel for containing a reaction solution for chemical bath deposition to form a film on a surface of a substrate; a substrate holding section for holding the substrate such that at least the surface of the substrate contacts the reaction solution, the substrate holding section including a fixing surface made of stainless steel on which a back side of the substrate is closely fixed; a heater disposed at a rear side of the fixing surface, the heater heating the substrate from the back side of the substrate; and a reaction solution temperature control unit for controlling temperature of the reaction solution in the reaction vessel.

Abstract translation: 化学浴沉积装置包括：反应容器，用于容纳用于化学浴沉积的反应溶液以在基材的表面上形成膜; 用于保持基板的基板保持部，使得至少基板的表面与反应溶液接触，所述基板保持部具有由基板的背面紧密固定的不锈钢制的固定面， 设置在所述固定面的后侧的加热器，所述加热器从所述基板的背面加热所述基板; 以及用于控制反应容器中的反应溶液的温度的反应溶液温度控制单元。

公开(公告)号：US20130269779A1

公开(公告)日：2013-10-17

申请号：US13912075

申请日：2013-06-06

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuo KAWANO ,  Hiroshi KAGA

IPC: H01L31/0328

CPC classification number: H01L31/0328 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

Abstract: The photoelectric conversion device of the present invention is a photoelectric conversion device which includes a substrate on which the following are layered in the order listed below: a lower electrode layer; a photoelectric conversion semiconductor layer which includes, as a major component, at least one kind of compound semiconductor having a chalcopyrite structure formed of a group Ib element, a group IIIb element, and a group VIb element; a buffer layer; and a transparent conductive layer, in which a carbonyl ion is provided on a surface of the buffer layer on the side of the transparent conductive layer and the buffer layer is a thin film layer having an average film thickness of 10 nm to 70 nm and includes a ternary compound of a cadmium-free metal, oxygen, and sulfur.

Abstract translation: 本发明的光电转换装置是一种光电转换装置，其包括以下列顺序层叠以下的基板：下电极层; 作为主要成分的至少一种具有由Ib族元素，IIIb族元素和VIb族元素形成的黄铜矿结构的化合物半导体的光电转换半导体层， 缓冲层; 以及透明导电层，其中在透明导电层一侧的缓冲层的表面上设置羰基离子，缓冲层是平均膜厚为10nm〜70nm的薄膜层，并且包括 无镉金属，氧和硫的三元化合物。

公开(公告)号：US20130112266A1

公开(公告)日：2013-05-09

申请号：US13732979

申请日：2013-01-02

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuo KAWANO ,  Mayu YAMAMOTO

IPC: H01L31/0312

CPC classification number: H01L31/0322 ,  H01L31/03928 ,  Y02E10/541

Abstract: The photoelectric conversion device of the present invention is a photoelectric conversion device which includes a substrate on which the following are layered in the order listed below: a lower electrode layer; a photoelectric conversion semiconductor layer which includes, as a major component, at least one kind of compound semiconductor having a chalcopyrite structure formed of a group Ib element, a group IIIb element, and a group VIb element; a buffer layer; and a transparent conductive layer, in which the buffer layer includes a ternary compound of a cadmium-free metal, oxygen, and sulfur, and a has a carbonyl ion on a surface facing the transparent conductive layer.

Abstract translation: 本发明的光电转换装置是一种光电转换装置，其包括以下列顺序层叠以下的基板：下电极层; 作为主要成分的至少一种具有由Ib族元素，IIIb族元素和VIb族元素形成的黄铜矿结构的化合物半导体的光电转换半导体层， 缓冲层; 以及透明导电层，其中缓冲层包括无镉金属，氧和硫的三元化合物，并且在面向透明导电层的表面上具有羰基离子。

公开(公告)号：US20170164609A1

公开(公告)日：2017-06-15

申请号：US15440701

申请日：2017-02-23

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIBATA ,  Shin OZAWA ,  Tetsuo KAWANO ,  Jou TOMINAGA ,  Naohiro MATSUNAGA ,  Hideo NAGASAKI ,  Naoharu KIYOTO ,  Yusuke HATANAKA

IPC: A01N25/08 ,  A01N59/00 ,  A01N25/26 ,  A01N25/02

CPC classification number: A01N25/34 ,  A01N25/02 ,  A01N25/08 ,  A01N25/26 ,  A01N59/00 ,  A01N59/16 ,  B32B7/06 ,  B32B7/12 ,  B32B23/04 ,  B32B23/20 ,  B32B27/00 ,  B32B27/06 ,  B32B27/18 ,  B32B27/281 ,  B32B27/36 ,  B32B27/365 ,  B32B2250/02 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2307/21 ,  B32B2307/40 ,  B32B2307/538 ,  B32B2307/728 ,  B32B2307/732 ,  B32B2307/748 ,  B32B2535/00 ,  C08J7/047 ,  C08J2367/02 ,  C08J2483/04 ,  C08K3/36 ,  C09D5/14 ,  C09D7/40 ,  C09D7/67 ,  C09D183/02 ,  A01N25/04

Abstract: An object of the present invention is to provide an antibacterial sheet which is particularly extremely effective for preventing cloudiness or dew condensation and can prevent or inhibit the bacterial multiplication, an antibacterial coat, a laminate, and an antibacterial solution. The antibacterial sheet of the present invention has a support and at least one antibacterial layer disposed on the support, in which the antibacterial layer contains a binder and at least one kind of an antibacterial agent, and a water contact angle of only the binder is equal to or less than 20°.

公开(公告)号：US20130224895A1

公开(公告)日：2013-08-29

申请号：US13861714

申请日：2013-04-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuo KAWANO ,  Hiroshi ARAI

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C18/1632 ,  C23C18/1678 ,  H01L21/67103 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A support-heat unit that supports and heats a substrate from the back side of the substrate, a reaction bath having an opening for supplying a CBD reaction solution for forming a film onto a front surface of the substrate, which is supported by the support-heat unit, and a reaction bath forward-backward drive unit that can press the opening onto the front surface of the substrate by moving the reaction bath toward the front surface of the substrate, which is supported by the support-heat unit, and that can detach the opening from the front surface of the substrate by moving the reaction bath away from the front surface of the substrate are provided.

Abstract translation: 一种支撑加热单元，其从所述基板的背面支撑和加热基板;反应槽，具有用于向所述基板的前表面供应用于形成膜的CBD反应溶液的开口，所述反应槽由所述支撑 - 加热单元和反应槽前后驱动单元，其可以通过将反应槽朝向由支撑加热单元支撑的基板的前表面移动而将开口压向基板的前表面，并且可以 提供了通过使反应槽远离基板的前表面从基板的前表面分离开口。