公开(公告)号：US20230327043A1

公开(公告)日：2023-10-12

申请号：US17910179

申请日：2021-02-23

申请人： Gesellschaft für Angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH

发明人： Daniel SCHALL

IPC分类号： H01L31/112 ,  H01L25/04 ,  H01L31/0328 ,  G02F1/19

CPC分类号： H01L31/1126 ,  H01L25/042 ,  H01L31/0328 ,  G02F1/19

摘要： The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) which comprises or is formed by two waveguide segments (12a, 12b), which extend at least substantially parallel to one another in the longitudinal direction and are preferably distanced from one another in the transverse direction, forming a gap (14) between them; and an active element (13), which overlies the longitudinal portion (12) of the waveguide and comprises at least one material or consists of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption, the two waveguide segments (12a, 12b) each being in contact, at least in some portions, on at least one side, in particular on the side facing the active element (14), with a gate electrode (15a, 15b) which preferably comprises silicon or consists of silicon.

公开(公告)号：US20230170432A1

公开(公告)日：2023-06-01

申请号：US17898404

申请日：2022-08-29

申请人： AUO Corporation

发明人： Chia-Hsiu Tsai ,  Chia-Ming Chang ,  Ruei-Pei Chen

IPC分类号： H01L31/105 ,  H01L31/0224 ,  H01L31/0328 ,  H01L31/109

CPC分类号： H01L31/1055 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/022408

摘要： A photosensitive device substrate including a substrate, an active device, and a photosensitive device is provided. The active device and the photosensitive device are disposed on the substrate. The active device has a semiconductor pattern and a gate electrode. The semiconductor pattern is disposed between the substrate and the gate electrode. The photosensitive device is electrically connected to the active device. The photosensitive device has a photoelectric conversion layer and a first electrode and second electrode disposed on two opposite sides of the photoelectric conversion layer. The first electrode is located between the photoelectric conversion layer and the semiconductor pattern, and the material of the first electrode includes a metal oxide.

公开(公告)号：US11664474B2

公开(公告)日：2023-05-30

申请号：US15734399

申请日：2020-09-11

申请人： TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Yuhao Zhai

IPC分类号： H01L31/113 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0328 ,  H01L31/028 ,  H01L31/0296 ,  H01L27/144

CPC分类号： H01L31/1136 ,  H01L31/02161 ,  H01L31/18 ,  H01L27/1443 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0328

摘要： Embodiments of the present application provide an array substrate, a fabrication method for an array substrate, and a display panel. The array substrate includes a substrate, a gate, a gate insulating layer, a seed layer, and a semiconductor layer that are sequentially stacked. A surface of the semiconductor layer away from the seed layer has a concave-convex structure formed by growth of nanocrystalline grains, which enhances light absorption of the semiconductor layer and solves the problems of poor light sensitivity and slow response speed of semiconductor devices.

公开(公告)号：US20170139060A1

公开(公告)日：2017-05-18

申请号：US15319965

申请日：2015-06-22

申请人： RENSSELAER POLYTECHNIC INSTITUTE

发明人： Rajendra P. DAHAL ,  Ishwara B. BHAT ,  Yaron DANON ,  James Jian-Qiang LU

IPC分类号： G01T1/24 ,  H01L31/115 ,  H01L31/18 ,  G01T3/08

CPC分类号： G01T1/24 ,  G01T3/08 ,  H01L31/0328 ,  H01L31/115 ,  H01L31/1185 ,  H01L31/18

摘要： Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities.

公开(公告)号：US20170117429A1

公开(公告)日：2017-04-27

申请号：US15382181

申请日：2016-12-16

申请人： IQE PLC.

发明人： Andrew Johnson ,  Andrew William Nelson ,  Robert Cameron Harper

IPC分类号： H01L31/074 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/0304

CPC分类号： H01L31/0328 ,  H01L29/16 ,  H01L29/20 ,  H01L29/267 ,  H01L31/02167 ,  H01L31/03044 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/1812 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A photovoltaic device, particularly a solar cell, comprises an interface between a layer of Group III-V material and a layer of Group IV material with a thin silicon diffusion barrier provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells.

公开(公告)号：US20160329453A1

公开(公告)日：2016-11-10

申请号：US15213998

申请日：2016-07-19

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01L31/0725 ,  H01L31/0236 ,  H01L31/032 ,  H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/0328 ,  H01L31/18 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or multi junction solar cells and a variety of other electronic devices such as transistors and LEDs. Specifically, the method includes depositing a textured oxide buffer on a substrate; depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a IV-VI compound; and forming a layer on the metal-inorganic film on which an additional element from the IV-VI compound is added, forming a IV-VI layer on a semiconductor device. The films comprising tin sulfides—SnS (tin sulphide), SnS2, and SnS3—are grown on inexpensive substrates, such as glass or flexible plastic, at low temperature, allowing for R2R (roll-to-roll) processing.

摘要翻译： 提供了一种简单的制造方法，用于制造用于高效串联或多结太阳能电池的便宜基板上的IV-VI族半导体膜以及诸如晶体管和LED的各种其它电子器件。 具体地，该方法包括在基板上沉积纹理氧化物缓冲液; 在缓冲层上沉积来自共晶合金的金属 - 无机膜，该金属是IV-VI化合物的组分; 在其上加入来自IV-VI化合物的附加元素的金属 - 无机膜上形成一层，在半导体器件上形成IV-VI层。 包含锡硫化物SnS（硫化锡），SnS2和SnS3的膜在低温下生长在诸如玻璃或柔性塑料的廉价基板上，允许进行R2R（卷对卷）处理。

公开(公告)号：US09461123B2

公开(公告)日：2016-10-04

申请号：US12867070

申请日：2009-02-09

申请人： Alexander G. Ulyashin ,  Smagul Karazhanov

发明人： Alexander G. Ulyashin ,  Smagul Karazhanov

IPC分类号： H01L31/04 ,  H01L29/24 ,  H01L31/0328 ,  H01L31/072

CPC分类号： H01L29/24 ,  H01L21/02521 ,  H01L21/02631 ,  H01L31/0321 ,  H01L31/0328 ,  H01L31/072 ,  Y02E10/50

摘要： This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

摘要翻译： 本发明涉及包含至少一层p型或n型材料的层（2,3）的电子半导体元件，其中所述p型或n型材料的层由具有 选择的掺杂剂。 本发明还涉及生产该组分的方法。

公开(公告)号：US20160269668A1

公开(公告)日：2016-09-15

申请号：US15035300

申请日：2014-11-17

申请人： SONY CORPORATION

发明人： ITARU OSHIYAMA ,  HIROTSUGU TAKAHASHI

IPC分类号： H04N5/3745 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/032 ,  H01L31/0328

CPC分类号： H04N5/3745 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/0328 ,  H04N5/374

摘要： The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.

摘要翻译： 本公开涉及能够控制耗尽层的厚度的固态图像捕获元件，其制造方法和电子器件。 固体摄像元件包括像素，其中构成为对入射光进行光电转换的光电转换膜和被配置为具有预定固定电荷的固定电荷膜的像素堆叠在半导体衬底上。 本公开的技术可以应用于例如背面照射型固态图像捕获元件，诸如数字静态照相机或摄像机的图像捕获设备，具有图像捕获功能的移动终端设备和使用 作为图像拍摄单元的固体摄像元件。

公开(公告)号：US09306090B2

公开(公告)日：2016-04-05

申请号：US14413534

申请日：2012-07-23

申请人： Hiroyuki Suto

发明人： Hiroyuki Suto

IPC分类号： H01L31/055 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/0328

CPC分类号： H01L31/02322 ,  H01L31/02327 ,  H01L31/0328 ,  H01L31/035218 ,  H01L31/055 ,  Y02E10/52

摘要： A composite particle including a core member including a rare earth ion which shows an upconversion effect and a retaining material which retains the rare earth ion, and a semiconductor member covering a part or all of the surface of the core member, wherein the retaining material includes a semiconductor material having a band gap greater than energy difference necessary for a second step excitation in the rare earth ion to occur, or an insulating material, and the semiconductor member includes a semiconductor material having a band gap smaller than the energy difference between a first excited state and a ground state of the rare earth ion.

摘要翻译： 一种复合颗粒，其包括包含表现出上转换效果的稀土离子的芯构件和保留稀土离子的保持材料，以及覆盖芯构件的一部分或全部表面的半导体构件，其中，保持材料包括 具有比在稀土离子中进行第二级激发所需的能量差大的带隙的半导体材料或绝缘材料，并且所述半导体部件包括具有小于所述稀土离子之间的能量差的带隙的半导体材料 激发态和稀土离子的基态。

公开(公告)号：US09236528B2

公开(公告)日：2016-01-12

申请号：US13763642

申请日：2013-02-09

申请人： NthDegree Technologies Worldwide Inc. ,  The United States of America as represented by the Administrator of the National Aeronautics and Space Administration

发明人： William Johnstone Ray ,  Mark D. Lowenthal ,  Neil O. Shotton ,  Richard A. Blanchard ,  Mark Allan Lewandowski ,  Kirk A. Fuller ,  Donald Odell Frazier

IPC分类号： H01L29/205 ,  H01L33/00 ,  H01L29/06 ,  H01L31/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/20 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/32 ,  H01L51/00 ,  H01L51/44 ,  H01L51/52 ,  H01L51/56 ,  H01L31/0232 ,  H01L33/08 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/054 ,  H01L31/068 ,  H01L31/0475

CPC分类号： H01L33/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/30 ,  H01L27/142 ,  H01L27/156 ,  H01L27/32 ,  H01L27/3281 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0512 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/068 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L51/0096 ,  H01L51/447 ,  H01L51/52 ,  H01L51/5203 ,  H01L51/5265 ,  H01L51/5271 ,  H01L51/5275 ,  H01L51/56 ,  H01L2251/5369 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.