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公开(公告)号:US20230136601A1
公开(公告)日:2023-05-04
申请号:US17970668
申请日:2022-10-21
Applicant: Fujifilm Electronic Materials U.S.A., Inc.
Inventor: Eric Turner , Bin Hu , Yannan Liang , James Johnston , James McDonough
IPC: C09G1/02 , H01L21/306 , H01L21/321
Abstract: A polishing composition includes an anionic abrasive; a pH adjuster; a transition metal catalyst; and an amino acid. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises tungsten or molybdenum; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
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公开(公告)号:US20230135325A1
公开(公告)日:2023-05-04
申请号:US17970667
申请日:2022-10-21
Applicant: Fujifilm Electronic Materials U.S.A., Inc.
Inventor: Yannan Liang , Bin Hu , Abhudaya Mishra , Ting-Kai Huang , Yibin Zhang , James Johnston , James McDonough
IPC: C09G1/02 , H01L21/306
Abstract: A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
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公开(公告)号:US20230060999A1
公开(公告)日:2023-03-02
申请号:US17896259
申请日:2022-08-26
Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
Inventor: James McDonough , Bin Hu , Qingmin Cheng
IPC: C09G1/02 , H01L21/321
Abstract: The present disclosure provides a polishing composition that includes at least one first amine, at least one second amine, and other components such as azoles. The first amine has a low molecular weight, for example 120 g/mol or less. The second amine has a high molecular weight, for example 125 g/mol or higher. The compositions can polish substrates that include copper and molybdenum, or alloys of each, at a high selectivity of copper to molybdenum.
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公开(公告)号:US10907074B2
公开(公告)日:2021-02-02
申请号:US16503198
申请日:2019-07-03
Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
Inventor: James McDonough , Saul Alvarado
IPC: C09G1/02 , H01L21/306 , H01L21/321 , C09G1/04
Abstract: Chemical mechanical polishing compositions include an abrasive, a first removal rate enhancer; and water; wherein the polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.
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公开(公告)号:US20210301177A1
公开(公告)日:2021-09-30
申请号:US17214987
申请日:2021-03-29
Applicant: Fujifilm Electronic Materials U.S.A., Inc.
Inventor: James McDonough , Ting-Kai Huang , Yannan Liang , Shu-Wei Chang , Sung Tsai Lin , Liqing Wen
IPC: C09G1/02 , H01L21/321
Abstract: This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion inhibitor that is at least one azole compound; and optionally a pH adjuster.
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公开(公告)号:US20210002511A1
公开(公告)日:2021-01-07
申请号:US16503198
申请日:2019-07-03
Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
Inventor: James McDonough , Saul Alvarado
IPC: C09G1/02 , H01L21/306
Abstract: Chemical mechanical polishing compositions include an abrasive, a first removal rate enhancer; and water; wherein the polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.
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