公开(公告)号：US20250101262A1

公开(公告)日：2025-03-27

申请号：US18887828

申请日：2024-09-17

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Alexandra CARLSON

IPC: C09G1/02

Abstract: Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for copper, tantalum, and TEOS. Polishing compositions comprising silica particles (greater than 12 nm), a metal corrosion inhibitor, and a phosphate surfactant are capable of achieving Ta to TEOS selectivities of greater than 1 and low Co removal rates (e.g., less than 200 Å/min), allowing for good topography correction (e.g., reduced dishing).

公开(公告)号：US20250084281A1

公开(公告)日：2025-03-13

申请号：US18825481

申请日：2024-09-05

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Anthony Y. KIM ,  Alexandra CARLSON

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/321

Abstract: The present disclosure relates to a polishing compositions that increase a silicon oxide removal rate without impairing the stability of an abrasive. The present disclosure relates to a polishing composition comprising an abrasive, a base compound, a silicon oxide removal rate controller, and an oxidizer, wherein the abrasive is a silica abrasive with a primary particle size ranging from about 30 nm to about 70 nm and a secondary particle size ranging from about 50 nm to about 130 nm; the base compound is an inorganic base; the silicon oxide removal rate controller is a zwitterion; and the oxidizer is a peroxide.