公开(公告)号：US20210017423A1

公开(公告)日：2021-01-21

申请号：US17040281

申请日：2019-03-14

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki KON

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304

Abstract: The present invention provides a means capable of polishing an object to be polished at a high polishing removal rate and further improving a surface quality of a surface of the object to be polished.
The present invention is a polishing composition used for polishing an object to be polished, containing an alumina abrasive and a dispersion medium, in which the alumina abrasive contain only an α-alumina A having an α conversion rate of 80% or more and an α-alumina B having an α conversion rate of less than 80% as crystalline alumina, and an average particle size of the α-alumina A is smaller than an average particle size of the α-alumina B.

公开(公告)号：US20210024781A1

公开(公告)日：2021-01-28

申请号：US17040355

申请日：2019-03-22

Applicant: FUJIMI INCORPORATED

Inventor： Hiroyuki ODA ,  Hiroki KON ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  H01L21/304

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.