公开(公告)号：US20220089911A1

公开(公告)日：2022-03-24

申请号：US17541881

申请日：2021-12-03

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Hiroyuki ODA ,  Naoto NOGUCHI

IPC: C09G1/04 ,  C08K5/14 ,  H01L21/304 ,  H01L29/16 ,  C08K3/26

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

公开(公告)号：US20240392164A1

公开(公告)日：2024-11-28

申请号：US18696798

申请日：2022-09-27

Applicant: FUJIMI INCORPORATED

Inventor： Yoshio MORI ,  Yuichiro NAKAGAI ,  Hiroyuki ODA

IPC: C09G1/02 ,  B24B37/04

Abstract: A polishing composition that can achieve an excellent polishing removal rate for an object to be polished is provided. The polishing composition used for polishing the object to be polished is provided. The polishing composition contains water, and sodium permanganate as an oxidant. In some preferred embodiments, the polishing composition further contains a metal salt selected from salts each of which has a cation containing a metal belonging to Groups 3 to 16 in the periodic table, and an anion. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.

公开(公告)号：US20240117218A1

公开(公告)日：2024-04-11

申请号：US18275285

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Hiroyuki ODA ,  Yasuki ITO ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

公开(公告)号：US20240110080A1

公开(公告)日：2024-04-04

申请号：US18529763

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Yasuaki ITO ,  Hiroyuki ODA ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]:


satisfying both of 500≤(C1/W1) and 0.04≤(C2/C1);  [A]



satisfying both of 200≤(C1/√(W1)) and 8≤C2; and  [B]



satisfying both of 500≤(C1/W1) and 8≤C2.  [C]

公开(公告)号：US20240117219A1

公开(公告)日：2024-04-11

申请号：US18275321

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Hiroyuki ODA ,  Yuichiro NAKAGAI ,  Shogaku IDE ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/30625

Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.

公开(公告)号：US20210024781A1

公开(公告)日：2021-01-28

申请号：US17040355

申请日：2019-03-22

Applicant: FUJIMI INCORPORATED

Inventor： Hiroyuki ODA ,  Hiroki KON ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  H01L21/304

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.

公开(公告)号：US20240400862A1

公开(公告)日：2024-12-05

申请号：US18696793

申请日：2022-09-27

Applicant: FUJIMI INCORPORATED

Inventor： Yoshio MORI ,  Yuichiro NAKAGAI ,  Hiroyuki ODA

IPC: C09G1/02 ,  B24B37/04

Abstract: Provided is a polishing composition that can improve the surface quality of a surface to be polished after polishing while achieving an excellent polishing removal rate for an object to be polished. The polishing composition to be provided contains sodium permanganate as an oxidant. The polishing composition contains or does not contain an abrasive A with a Mohs hardness of less than 8 is contained as an abrasive. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.

公开(公告)号：US20240101867A1

公开(公告)日：2024-03-28

申请号：US18529465

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Hiroyuki ODA ,  Yasuaki ITO ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.