公开(公告)号：US20240117219A1

公开(公告)日：2024-04-11

申请号：US18275321

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Hiroyuki ODA ,  Yuichiro NAKAGAI ,  Shogaku IDE ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/30625

Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.

公开(公告)号：US20210024781A1

公开(公告)日：2021-01-28

申请号：US17040355

申请日：2019-03-22

Applicant: FUJIMI INCORPORATED

Inventor： Hiroyuki ODA ,  Hiroki KON ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  H01L21/304

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.

公开(公告)号：US20220089911A1

公开(公告)日：2022-03-24

申请号：US17541881

申请日：2021-12-03

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Hiroyuki ODA ,  Naoto NOGUCHI

IPC: C09G1/04 ,  C08K5/14 ,  H01L21/304 ,  H01L29/16 ,  C08K3/26

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

公开(公告)号：US20210348028A1

公开(公告)日：2021-11-11

申请号：US17277886

申请日：2019-09-24

Applicant: FUJIMI INCORPORATED

Inventor： Sachiko HIRAKO ,  Naoto NOGUCHI

IPC: C09G1/02 ,  C09K13/04 ,  H01L21/465

Abstract: Provided are a polishing composition capable of achieving both a high polishing removal rate and high surface quality in polishing a gallium oxide substrate, and a method for polishing and a method for manufacturing a gallium oxide substrate using the polishing composition. According to the art disclosed herein, provided is a polishing composition used for polishing a gallium oxide substrate. This polishing composition contains abrasive and water. By polishing with such a polishing composition, it is possible to improve the polishing removal rate for the gallium oxide substrate and realize a gallium oxide substrate having good surface quality.

公开(公告)号：US20200299546A1

公开(公告)日：2020-09-24

申请号：US16649407

申请日：2018-09-28

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto NOGUCHI

IPC: C09G1/02

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.