公开(公告)号：US20220415669A1

公开(公告)日：2022-12-29

申请号：US17902507

申请日：2022-09-02

Applicant: FUJIMI INCORPORATED

Inventor： Yoshihiro IZAWA ,  Kenta IDE

IPC: H01L21/321 ,  C09G1/02 ,  C09G1/16 ,  H01L21/3105 ,  C09K3/14

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

公开(公告)号：US20190080927A1

公开(公告)日：2019-03-14

申请号：US16123632

申请日：2018-09-06

Applicant: FUJIMI INCORPORATED

Inventor： Yoshihiro IZAWA ,  Kenta IDE

IPC: H01L21/321 ,  C09G1/16 ,  C09K3/14

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.