公开(公告)号：US20230056027A1

公开(公告)日：2023-02-23

申请号：US17950784

申请日：2022-09-22

Applicant: FUJIMI INCORPORATED

Inventor： Yusuke KAWASAKI ,  Shogo TSUBOTA ,  Masaaki ITO ,  Jun SHINODA ,  Keiji ASHITAKA

IPC: C01B33/145 ,  C01B33/141

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol. The present invention relates to a method for producing a silica sol, including synthesizing a silica sol by, in a reaction liquid containing an alkoxysilane or a condensate thereof, water, and an alkali catalyst, allowing the alkoxysilane or condensate thereof to react with the water in the presence of the alkali catalyst, wherein the alkali catalyst is not additionally supplied after the start of the synthesis until the finish time of the synthesis, and during 90% or more of the time between when 5 minutes have elapsed from the time point when the electrical conductivity of the reaction liquid reaches a local maximum for the first time and the finish time of the synthesis, the proportion of the value of the electrical conductivity of the reaction liquid is more than 90% relative to the value of the electrical conductivity at the time when 5 minutes have elapsed from the time point when the local maximum is reached.

公开(公告)号：US20210087067A1

公开(公告)日：2021-03-25

申请号：US17022876

申请日：2020-09-16

Applicant: FUJIMI INCORPORATED

Inventor： Keiji ASHITAKA ,  Yusuke KAWASAKI ,  Masaaki ITO ,  Jun SHINODA ,  Shogo TSUBOTA

IPC: C01B33/145

Abstract: There is provided a method for producing a silica sol including: a first step of adding an organic acid to at least one of liquid (A) containing an alkaline catalyst, water, and a first organic solvent and liquid (C) containing water; and a second step of mixing the liquid (A) with liquid (B) containing an alkoxysilane or its condensate and a second organic solvent, and the liquid (C) to make a reaction liquid after the first step.

公开(公告)号：US20200308009A1

公开(公告)日：2020-10-01

申请号：US16818114

申请日：2020-03-13

Applicant: FUJIMI INCORPORATED

Inventor： Yusuke KAWASAKI ,  Shogo TSUBOTA ,  Masaaki ITO ,  Jun SHINODA ,  Keiji ASHITAKA

IPC: C01B33/145

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol. The present invention relates to a method for producing a silica sol, including synthesizing a silica sol by, in a reaction liquid containing an alkoxysilane or a condensate thereof, water, and an alkali catalyst, allowing the alkoxysilane or condensate thereof to react with the water in the presence of the alkali catalyst, wherein the alkali catalyst is not additionally supplied after the start of the synthesis until the finish time of the synthesis, and during 90% or more of the time between when 5 minutes have elapsed from the time point when the electrical conductivity of the reaction liquid reaches a local maximum for the first time and the finish time of the synthesis, the proportion of the value of the electrical conductivity of the reaction liquid is more than 90% relative to the value of the electrical conductivity at the time when 5 minutes have elapsed from the time point when the local maximum is reached.

公开(公告)号：US20240262698A1

公开(公告)日：2024-08-08

申请号：US18429695

申请日：2024-02-01

Applicant: FUJIMI INCORPORATED

Inventor： Shogo TSUBOTA ,  Masaaki ITO ,  Keiji ASHITAKA ,  Yusuke KAWASAKI ,  Kazuaki IWASAKI

IPC: C01B33/141

CPC classification number: C01B33/141 ,  C01P2004/64 ,  C01P2006/22 ,  C01P2006/80

Abstract: A silica sol which does not gelate, has a high purity, and contains a high concentration of silica particles is provided. A silica sol containing silica particles and water, wherein a product of an average primary particle size of the silica particles and an average circularity of the silica particles is 15.0 or more and 31.2 or less, a concentration of the silica particles is 20 mass % or more, a total organic carbon amount per silica particle is less than 10 mass ppm, when the concentration of the silica particles is 20 mass %, a viscosity at 25° C. is 300 mPa·s or less, and a concentration of a metal impurity is less than 1 mass ppm.

公开(公告)号：US20190061095A1

公开(公告)日：2019-02-28

申请号：US16080960

申请日：2017-02-13

Applicant: FUJIMI INCORPORATED

Inventor： Shinichiro TAKAMI ,  Yusuke KAWASAKI

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/02

Abstract: Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry S1 and a second polishing slurry S2 to a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry S1 comprises an abrasive A1 and a water-soluble polymer P1. The polishing removal rate of the first polishing slurry S1 is higher than that of the second polishing slurry S2.