公开(公告)号：US10703936B2

公开(公告)日：2020-07-07

申请号：US16089935

申请日：2017-03-15

Applicant: FUJIMI INCORPORATED

Inventor： Yukinobu Yoshizaki ,  Koichi Sakabe ,  Yusuke Kadohashi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  H01L21/3105 ,  C09K3/14 ,  B24B37/04

Abstract: To provide a technology by which, on the occasion of polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b) can be increased.The polishing composition of the present invention is a polishing composition used for polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the polishing composition including: an organic acid-immobilized silica; and a particular selection ratio improver for increasing the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b).

公开(公告)号：US11111414B2

公开(公告)日：2021-09-07

申请号：US16559941

申请日：2019-09-04

Applicant: FUJIMI INCORPORATED

Inventor： Yusuke Kadohashi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306

Abstract: A polishing composition having a pH of less than 7, comprising an abrasive grain and an amide compound, wherein the amide compound has a group forming a Σ conjugated system with a carbonyl group.

公开(公告)号：US10988637B2

公开(公告)日：2021-04-27

申请号：US16559073

申请日：2019-09-03

Applicant: FUJIMI INCORPORATED

Inventor： Yusuke Kadohashi

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/321

Abstract: A polishing composition according to the present invention is used to polish an object to be polished including a high dielectric constant layer, in which the polishing composition contains an abrasive grain, water, and organic acid, when a zeta potential of the abrasive grain in the polishing composition is set as X [mV], and a zeta potential of the high dielectric constant layer during polishing using the polishing composition is set as Y [mV], X is positive, and Y−X≤−5 is established.