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公开(公告)号：US08676516B2
公开(公告)日：2014-03-18
申请号：US13524208
申请日：2012-06-15
IPC分类号： G01L3/00
CPC分类号： G01R31/31725 , G01R31/2856
摘要： A method and test circuit provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
摘要翻译： 一种方法和测试电路提供测量，以准确表征由于负偏压温度不稳定性（NBTI）和正偏压温度不稳定性（PBTI）引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量，当应力以几十纳秒的间隔施加，同时避免不必要的恢复时，和/或实现纳秒范围内的恢复曲线采样分辨率，使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力，然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
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公开(公告)号：US20120262187A1
公开(公告)日：2012-10-18
申请号：US13524208
申请日：2012-06-15
IPC分类号： G01R27/28
CPC分类号： G01R31/31725 , G01R31/2856
摘要： A method and test circuit provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
摘要翻译： 一种方法和测试电路提供测量，以准确表征由于负偏压温度不稳定性（NBTI）和正偏压温度不稳定性（PBTI）引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量，当应力以几十纳秒的间隔施加，同时避免不必要的恢复时，和/或实现纳秒范围内的恢复曲线采样分辨率，使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力，然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
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3.发明申请Delay-Based Bias Temperature Instability Recovery Measurements for Characterizing Stress Degradation and Recovery 失效基于延迟的偏压温度不稳定性恢复测量，用于表征应力退化和恢复公开(公告)号：US20090319202A1
公开(公告)日：2009-12-24
申请号：US12142294
申请日：2008-06-19
IPC分类号： G01L1/00
CPC分类号： G01R31/31725 , G01R31/2856
摘要： A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
摘要翻译： 一种方法，测试电路和测试系统提供测量以精确表征由于负偏压温度不稳定性（NBTI）和正偏压温度不稳定性（PBTI）引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量，当应力以几十纳秒的间隔施加，同时避免不必要的恢复时，和/或实现纳秒范围内的恢复曲线采样分辨率，使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力，然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
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4.发明授权Delay-based bias temperature instability recovery measurements for characterizing stress degradation and recovery 失效基于延迟的偏置温度不稳定性恢复测量，用于表征应力退化和恢复公开(公告)号：US07949482B2
公开(公告)日：2011-05-24
申请号：US12142294
申请日：2008-06-19
IPC分类号： G01L1/00
CPC分类号： G01R31/31725 , G01R31/2856
摘要： A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
摘要翻译： 一种方法，测试电路和测试系统提供测量以精确表征由于负偏压温度不稳定性（NBTI）和正偏压温度不稳定性（PBTI）引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量，当应力以几十纳秒的间隔施加，同时避免不必要的恢复时，和/或实现纳秒范围内的恢复曲线采样分辨率，使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力，然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
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公开(公告)号：US08229683B2
公开(公告)日：2012-07-24
申请号：US12962726
申请日：2010-12-08
IPC分类号： G01L1/00
CPC分类号： G01R31/31725 , G01R31/2856
摘要： A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
摘要翻译： 一种方法，测试电路和测试系统提供测量以精确表征由于负偏压温度不稳定性（NBTI）和正偏压温度不稳定性（PBTI）引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量，当应力以几十纳秒的间隔施加，同时避免不必要的恢复时，和/或实现纳秒范围内的恢复曲线采样分辨率，使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力，然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
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公开(公告)号：US20110074394A1
公开(公告)日：2011-03-31
申请号：US12962726
申请日：2010-12-08
IPC分类号： G01R19/00
CPC分类号： G01R31/31725 , G01R31/2856
摘要： A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
摘要翻译： 一种方法，测试电路和测试系统提供测量以精确表征由于负偏压温度不稳定性（NBTI）和正偏压温度不稳定性（PBTI）引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量，当应力以几十纳秒的间隔施加，同时避免不必要的恢复时，和/或实现纳秒范围内的恢复曲线采样分辨率，使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力，然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
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7.发明授权Method and test system for fast determination of parameter variation statistics 有权方法和测试系统，用于快速确定参数变化统计公开(公告)号：US08862426B2
公开(公告)日：2014-10-14
申请号：US11961442
申请日：2007-12-20
申请人： Kanak B. Agarwal , Jerry D. Hayes , Sani R. Nassif
发明人： Kanak B. Agarwal , Jerry D. Hayes , Sani R. Nassif
IPC分类号： G01R19/00 , G01R31/00 , G01R31/14 , G01R31/28 , G01R31/3185
CPC分类号： G01R31/2884 , G01R31/2831 , G01R31/318533 , G01R31/318558
摘要： A method and test system for fast determination of parameter variation statistics provides a mechanism for determining process variation and parameter statistics using low computing power and readily available test equipment. A test array having individually selectable devices is stimulated under computer control to select each of the devices sequentially. A test output from the array provides a current or voltage that dependent on a particular device parameter. The sequential selection of the devices produces a voltage or current waveform, characteristics of which are measured using a digital multi-meter that is interfaced to the computer. The rms value of the current or voltage at the test output is an indication of the standard deviation of the parameter variation and the DC value of the current or voltage is an indication of the mean value of the parameter.
摘要翻译： 用于快速确定参数变化统计的方法和测试系统提供了使用低计算能力和容易获得的测试设备来确定过程变化和参数统计的机制。 在计算机控制下刺激具有可单独选择的装置的测试阵列以依次选择每个装置。 阵列的测试输出提供依赖于特定器件参数的电流或电压。 器件的顺序选择产生电压或电流波形，其特性使用与计算机连接的数字万用表进行测量。 测试输出端的电流或电压的有效值表示参数变化的标准偏差，电流或电压的直流值表示参数的平均值。
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8.发明申请METHOD AND TEST SYSTEM FOR FAST DETERMINATION OF PARAMETER VARIATION STATISTICS 有权用于快速确定参数变化统计的方法和测试系统公开(公告)号：US20090160477A1
公开(公告)日：2009-06-25
申请号：US11961442
申请日：2007-12-20
申请人： Kanak B. Agarwal , Jerry D. Hayes , Sani R. Nassif
发明人： Kanak B. Agarwal , Jerry D. Hayes , Sani R. Nassif
CPC分类号： G01R31/2884 , G01R31/2831 , G01R31/318533 , G01R31/318558
摘要： A method and test system for fast determination of parameter variation statistics provides a mechanism for determining process variation and parameter statistics using low computing power and readily available test equipment. A test array having individually selectable devices is stimulated under computer control to select each of the devices sequentially. A test output from the array provides a current or voltage that dependent on a particular device parameter. The sequential selection of the devices produces a voltage or current waveform, characteristics of which are measured using a digital multi-meter that is interfaced to the computer. The rms value of the current or voltage at the test output is an indication of the standard deviation of the parameter variation and the DC value of the current or voltage is an indication of the mean value of the parameter.
摘要翻译： 用于快速确定参数变化统计的方法和测试系统提供了使用低计算能力和容易获得的测试设备来确定过程变化和参数统计的机制。 在计算机控制下刺激具有可单独选择的装置的测试阵列以依次选择每个装置。 阵列的测试输出提供依赖于特定器件参数的电流或电压。 器件的顺序选择产生电压或电流波形，其特性使用与计算机连接的数字万用表进行测量。 测试输出端的电流或电压的有效值表示参数变化的标准偏差，电流或电压的直流值表示参数的平均值。
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9.发明申请CHARACTERIZATION CIRCUIT FOR FAST DETERMINATION OF DEVICE CAPACITANCE VARIATION 失效用于快速确定器件电容变化的特征电路公开(公告)号：US20090160463A1
公开(公告)日：2009-06-25
申请号：US12361891
申请日：2009-01-29
申请人： Kanak B. Agarwal , Jerry D. Hayes , Sani R. Nassif
发明人： Kanak B. Agarwal , Jerry D. Hayes , Sani R. Nassif
IPC分类号： G01R27/26
CPC分类号： G01R31/2884 , G01R31/2831 , G01R31/318533 , G01R31/318558
摘要： A test circuit for fast determination of device capacitance variation statistics provides a mechanism for determining process variation and parameter statistics using low computing power and readily available test equipment. A test array having individually selectable devices is stimulated under computer control to select each of the devices sequentially. A test output from the array provides a current or voltage that dependent on a particular device parameter. The sequential selection of the devices produces a voltage or current waveform, characteristics of which are measured using a digital multi-meter that is interfaced to the computer. The rms value of the current or voltage at the test output is an indication of the standard deviation of the parameter variation and the DC value of the current or voltage is an indication of the mean value of the parameter.
摘要翻译： 用于快速确定器件电容变化统计的测试电路提供了一种使用低计算能力和易于获得的测试设备来确定过程变化和参数统计的机制。 在计算机控制下刺激具有可单独选择的装置的测试阵列以依次选择每个装置。 阵列的测试输出提供依赖于特定器件参数的电流或电压。 器件的顺序选择产生电压或电流波形，其特性使用与计算机连接的数字万用表进行测量。 测试输出端的电流或电压的有效值表示参数变化的标准偏差，电流或电压的直流值表示参数的平均值。
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10.发明申请公开(公告)号：US20090164155A1
公开(公告)日：2009-06-25
申请号：US11961520
申请日：2007-12-20
申请人： KANAK B. AGARWAL , Jerry D. Hayes , Sani R. Nassif
发明人： KANAK B. AGARWAL , Jerry D. Hayes , Sani R. Nassif
CPC分类号： G01R31/2894 , G01R31/2648 , H01L22/14
摘要： A method and system for isolating dopant fluctuation and device length variation from statistical measurements of threshold voltage provides fast determination of process variation for devices in a characterization array. Statistics of threshold voltage are measured at two different values of drain-source voltage imposed on the devices in the characterization array. At least one moment of the a drain-induced barrier lowering (DIBL) coefficient η, which is a measure of device length and zero-bias threshold voltage VTH0 are computed directly from the statistical moment values of the threshold variation. The standard deviation and mean of η and VTH0 can thereby be obtained having only a statistical description of the threshold voltage for the devices in the array at multiple drain-source voltages. The threshold voltage statistics can be obtained from a digital meter measurement (rms and DC average) of a waveform indicative of threshold voltage produced by sequentially selecting the array devices.
摘要翻译： 从阈值电压的统计测量中分离掺杂剂波动和器件长度变化的方法和系统可以快速确定表征阵列中器件的工艺变化。 在表征阵列中的器件上施加的两个不同的漏源电压值，测量阈值电压的统计。 漏极引起的屏障降低（DIBL）系数eta的至少一个时刻，其是器件长度和零偏置阈值电压VTH0的量度，直接从阈值变化的统计矩值来计算。 因此，可以获得eta和VTH0的标准偏差和平均值，其仅具有在多个漏 - 源电压下阵列中的器件的阈值电压的统计描述。 阈值电压统计可以从表示通过依次选择阵列器件产生的阈值电压的波形的数字计量器测量（均方根和直流平均）获得。
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