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公开(公告)号:US06816530B2
公开(公告)日:2004-11-09
申请号:US10261423
申请日:2002-09-30
申请人: Federico Capasso , Alfred Yi Cho , Raffaele Colombelli , Claire F Gmachl , Nina Owschimikow , Deborah Lee Sivco
发明人: Federico Capasso , Alfred Yi Cho , Raffaele Colombelli , Claire F Gmachl , Nina Owschimikow , Deborah Lee Sivco
IPC分类号: H01S310
CPC分类号: B82Y20/00 , G02F1/39 , H01S3/1083 , H01S3/109 , H01S5/0604 , H01S5/0605 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/3213 , H01S5/3402 , H01S5/3425
摘要: A monolithic apparatus has a laser optical cavity. The laser optical cavity has a multi-layer structure that includes a first active semiconductor multi-layer and a second semiconductor multi-layer. The second semiconductor multi-layer is located laterally adjacent to the first active semiconductor multi-layer. The first active semiconductor multi-layer includes a sequence of quantum well structures that produce light of a lasing frequency in response to being electrically pumped. The second semiconductor multi-layer includes a sequence of quantum well structures and is configured to both absorb light of the lasing frequency and produce one of parametric light and harmonic light in response to absorbing light of the lasing frequency.
摘要翻译: 单片设备具有激光光腔。 激光光腔具有包括第一有源半导体多层和第二半导体多层的多层结构。 第二半导体多层位于与第一有源半导体多层横向相邻的位置。 第一有源半导体多层包括量子阱结构序列,其响应于被电泵浦产生激光频率的光。 第二半导体多层包括一系列量子阱结构,并且被配置为既吸收激光频率的光并且响应于吸收激光频率的光而产生参量光和谐波光之一。