摘要:
The present invention provides a method and apparatus is provided for calibrating a driver impedance in an integrated circuit device. The method includes providing a signal from a synchronous circuit that is indicative of an impedance mismatch between a driver circuit and a load. The method also includes selecting one of a plurality of impedances of the driver circuit to reduce the impedance mismatch in response to the signal.
摘要:
A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.
摘要:
A method and apparatus for managing the variable timing of internal clock signals derived from an external clock signal in order to compensate for uncertainty and variations in the amount of read clock back timing relative to data flow to achieve a specified read latency. A reset signal is generated at DRAM initialization and starts an first counter, which counts external clock cycles, and is also passed through the slave delay line of the delay lock loop to start a second counter. The counters run continuously once started and the difference in count values represent the internal delay as an external clock signal passes through the delay lock loop to produce an internal read clock signal. An internal read latency value is used to offset either counter to account for the internal read latency of the DRAM circuit. Once the non-offset counter is equivalent to the offset counter, read data is placed on an output line with a specified read latency and synchronized with the external read clock.
摘要:
Delay-locked loops, signal locking methods and devices and system incorporating delay-locked loops are described. A delay-locked loop includes a forward delay path, a feedback delay path, a phase detector and a timer circuit. The forward delay path alternatively couples to an external clock signal and to an internal test signal. The phase detector adjusts a delay line based upon the phase differences of a feedback signal and the external clock signal. The timer circuit switches the test signal into the forward delay path and measures the time of traversal of the test signal around the forward delay path and the feedback delay path and generates a time constant for configuring the phase detector's update period. The phase detector is thereafter able to stabilize at an improved rate.
摘要:
Delay-locked loops, signal locking methods and devices incorporating delay-locked loops are described. A delay-locked loop includes a forward loop path, a feedback loop path, and a phase detector. A test clock signal is temporarily switched to traverse the forward loop path and the feedback loop path. The phase detector is coupled to both the forward and feedback loop path circuits and is configured to periodically adjust responsive to a calculated loop delay of the test clock signal. The phase detector is thereafter able to stabilize at an improved rate.
摘要:
Delay-locked loops, signal locking methods and devices and systems incorporating delay-locked loops are described. A delay-locked loop includes a forward delay path, a feedback delay path, a phase detector and a timer circuit. The forward delay path alternatively couples to an external clock signal and to an internal test signal. The phase detector adjusts a delay line based upon the phase differences of a feedback signal and the external clock signal. The timer circuit switches the internal test signal into the forward delay path and measures the time of traversal of the internal test signal around the forward delay path and the feedback delay path and generates a time constant for configuring the phase detector's update period. The phase detector is thereafter able to stabilize at an improved rate.
摘要:
A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.
摘要:
A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.
摘要:
A method and apparatus for managing the variable timing of internal clock signals derived from an external clock signal in order to compensate for uncertainty and variations in the amount of read clock back timing relative to data flow to achieve a specified read latency. A reset signal is generated at DRAM initialization and starts an first counter, which counts external clock cycles, and is also passed through the slave delay line of the delay lock loop to start a second counter. The counters run continuously once started and the difference in count values represent the internal delay as an external clock signal passes through the delay lock loop to produce an internal read clock signal. An internal read latency value is used to offset either counter to account for the internal read latency of the DRAM circuit. Once the non-offset counter is equivalent to the offset counter, read data is placed on an output line with a specified read latency and synchronized with the external read clock.
摘要:
An apparatus and method for coordinating the variable timing of internal clock signals derived from an external clock signal to ensure that read data and a read clock used to latch the read data arrive at the data latch in synchronism and with a specified read latency. A read clock is produced from the external clock signal in a delay lock loop circuit and a start signal, produced in response to a read command, is passed through a delay circuit slaved with the delay lock loop so that the read clock signal and a delayed start signal are subject to the same internal timing variations. The delayed start signal is used to thereby control the output of read data by the read clock signal.