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公开(公告)号：US5372427A
公开(公告)日：1994-12-13
申请号：US812232
申请日：1991-12-19
CPC分类号： G01K1/16
摘要： A low-cost, highly-responsive temperature sensor has a thermistor element surface-mounted in a circuit defined by an electrically-conducting layer of a three-layer circuit substrate to be in close thermal coupling to a metal base layer on an opposite side of the substrate. The base layer is adapted to be disposed in heat-collecting relation to a surface whose temperature is to be monitored. An intermediate layer of the substrate has a binder electrically insulating the thermistor from the metal base layer and has thermally-conducting particles dispersed in the binder to improve thermal coupling of the thermistor to the heat-collecting substrate base layer. The circuit defines terminal pads surface-mounting the thermistor element at one end of the substrate and defines interconnected terminal pads at an opposite end of the substrate which are connected to device lead wires in substantial thermal isolation from the thermistor element.
摘要翻译： 低成本，高响应的温度传感器具有表面安装在由三层电路基板的导电层限定的电路中的热敏电阻元件，以与第三层电路基板的相反侧上的金属基底层紧密地热耦合 底物。 基层适于与要监测温度的表面进行热收集关系。 基板的中间层具有将热敏电阻与金属基层电绝缘的粘合剂，并且具有分散在粘合剂中的导热颗粒以改善热敏电阻与集热基板基底层的热耦合。 该电路定义了在基板的一端表面安装热敏电阻元件的端子焊盘，并且在基板的相对端限定了互连的端子焊盘，其连接到与热敏电阻元件相当热隔离的器件引线。
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公开(公告)号：US5556791A
公开(公告)日：1996-09-17
申请号：US368229
申请日：1995-01-03
CPC分类号： C30B29/06 , C30B13/00 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S117/90 , Y10T117/102
摘要： A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.
摘要翻译： 一种用于使用光学炉（30）形成用于太阳能电池的半导体颗粒（42）的方法和装置。 动力半导体原料的均匀质量堆（26）几乎被瞬时光学融合，以限定高纯度半导体颗粒而没有氧化。 高强度光能被引导并聚焦到由其下方的输送介质（16）前进的半导体原料桩（26）。 半导体原料桩（26）至少部分地熔化并熔化以形成单个半导体颗粒（42），其可以稍后通过隔板（50）从耐火层（18）分离，优选由二氧化硅组成。 设备（10）和过程是自动化的，提供高产量以产生用于实现高效率太阳能电池的均匀质量，高质量的球体。 该装置是高能效的，由此可以容易且快速地建立工艺参数。
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公开(公告)号：US5144841A
公开(公告)日：1992-09-08
申请号：US695623
申请日：1991-05-03
IPC分类号： G01L9/00
CPC分类号： G01L9/0002 , G01L9/0001
摘要： The invention relates to a device for measuring pressures or forces, comprising a pressure or force sensor in the form of a piezoelectric or piezoresistive pressure or force transducer having at least one electric cable connected thereto, and an incompressible elastomer mass which transmits the pressure or force to be measured to the transducer.
摘要翻译： 本发明涉及一种用于测量压力或力的装置，包括压电或压阻式压力或力传感器形式的压力传感器或压力传感器，该压力传感器或压阻式压力传感器具有连接至少一根电缆的不锈钢弹性体， 被测量到传感器。
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4.发明授权
公开(公告)号：US5614020A
公开(公告)日：1997-03-25
申请号：US637194
申请日：1996-04-08
CPC分类号： C30B29/06 , C30B13/00 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S117/90 , Y10T117/102
摘要： A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.
摘要翻译： 一种用于使用光学炉（30）形成用于太阳能电池的半导体颗粒（42）的方法和装置。 动力半导体原料的均匀质量堆（26）几乎被瞬时光学融合，以限定高纯度半导体颗粒而没有氧化。 高强度光能被引导并聚焦到由其下方的输送介质（16）前进的半导体原料桩（26）。 半导体原料桩（26）至少部分地熔化并熔化以形成单个半导体颗粒（42），其可以稍后通过隔板（50）从耐火层（18）分离，优选由二氧化硅组成。 设备（10）和过程是自动化的，提供高产量以产生用于实现高效率太阳能电池的均匀质量，高质量的球体。 该装置是高能效的，由此可以容易且快速地建立工艺参数。
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公开(公告)号：US5525280A
公开(公告)日：1996-06-11
申请号：US224219
申请日：1994-04-07
CPC分类号： G01L9/0075 , Y10T29/435
摘要： A monolithic capacitive pressure transducer is shown composed of ceramic material having a closed cavity formed near a surface thereof and having capacitor plates formed on two opposed surfaces defining the cavity. Vias are formed extending from the capacitor plates to permit electrical connection therewith. The transducer is made by separately forming under pressure a diaphragm and a base having a recess in the top surface using ceramic powder coated with an organic binder. A metal layer is deposited on the two pieces and the pieces are then joined together to form a single unit. A spacer may be inserted in the recess to ensure that a predetermined gap is maintained between the two parts during the joining operation. The parts are then debinderized by heating in air to a first temperature level to allow the binder organics, as well as the spacer organics if a spacer is employed, to be vaporized and/or decomposed and removed through the open pores of the diaphragm and base. The unit is then brought up to a sintering temperature in a reducing atmosphere to change it into a monolithic body and to convert the metallized layer into a conductive layer bonded to the ceramic.
摘要翻译： 单片电容式压力传感器由陶瓷材料组成，陶瓷材料在其表面附近形成有封闭的空腔，并且在形成空腔的两个相对的表面上形成电容器板。 形成从电容器板延伸以允许与其电连接的通孔。 传感器通过在压力下分开地形成隔膜和使用涂覆有有机粘合剂的陶瓷粉末在顶面中具有凹部的基底来制造。 金属层沉积在两片上，然后将片连接在一起以形成单个单元。 间隔件可以插入凹部中，以确保在接合操作期间在两个部件之间保持预定的间隙。 然后通过在空气中加热至第一温度水平使部分脱粘，以允许粘合剂有机物以及间隔器有机物（如果使用间隔物）通过隔膜和基底的开孔气化和/或分解和除去 。 然后将该单元升温至还原气氛中的烧结温度以将其改变成单体，并将金属化层转化为与陶瓷结合的导电层。
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6.发明授权
公开(公告)号：US4570097A
公开(公告)日：1986-02-11
申请号：US665490
申请日：1984-10-26
CPC分类号： G01L9/008
摘要： A cylinder pressure transmitter has means mounting piezoelectric means to provide an electrical signal corresponding to the pressure of a cylinder of an internal combustion engine and has electronic means on the mounting means to amplify the signal for transmission to computer control means for regulating engine operation to improve performance. The electronic means are mounted on an insulating substrate which is secured to a rigid support in a housing. Contact means, guide means, and locating means provided on the housing and on the mounting means cooperate to mount the housing on the mounting means to provide reliable interconnection between the electronic and piezoelectric means and to retain the interconnection even when subjected to engine vibrations.
摘要翻译： 气缸压力变送器具有安装压电装置的装置，以提供对应于内燃机的气缸的压力的电信号，并且在安装装置上具有电子装置以放大信号以传输到计算机控制装置以调节发动机运转以改善 性能。 电子装置安装在绝缘基板上，绝缘基板固定到壳体中的刚性支撑件。 接触装置，引导装置和设置在壳体上和安装装置上的定位装置配合以将壳体安装在安装装置上，以在电子和压电装置之间提供可靠的互连，并且即使在受到发动机振动时也保持互连。
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公开(公告)号：US5315672A
公开(公告)日：1994-05-24
申请号：US764257
申请日：1991-09-23
申请人： Francois A. Padovani
发明人： Francois A. Padovani
CPC分类号： G01N21/7703 , G01N2201/0873
摘要： A fiber optic sensor for detecting the presence or concentration of particular chemical or biological species in a zone to be monitored has light-emitting and detecting elements such as a gallium arsenide light-emitting diode and a Schottky diode light detector provided in a semiconductor body, and has an optical fiber formed in situ on a surface of the body to conduct light from the light-emitting diode to the detector. The fiber has a long light-transmitting core of a material such as silicon dioxide deposited on a semiconductor body surface and defined by photolithographic techniques and has a cladding deposited over and around the core of a material of relatively lower refractive index than the core. The cladding material reacts when contacted by the particular chemical or biological species to produce measurable changes in transmission of light through the fiber so that the detector provides an electrical signal representative of the presence or concentration of the species.
摘要翻译： 用于检测待监测区域中特定化学或生物物质的存在或浓度的光纤传感器具有发光和检测元件，例如设置在半导体主体中的砷化镓发光二极管和肖特基二极管光检测器， 并且在本体的表面上具有原位形成的光纤，以将来自发光二极管的光导入检测器。 光纤具有长的透光芯，例如沉积在半导体主体表面上的二氧化硅的材料，并通过光刻技术限定，并且具有沉积在比芯更低折射率的材料的芯上和周围的包层。 包层材料在被特定的化学或生物物质接触时反应，以产生通过纤维的光的透射变化，使得检测器提供代表物种的存在或浓度的电信号。
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公开(公告)号：US4213937A
公开(公告)日：1980-07-22
申请号：US726018
申请日：1976-09-22
申请人： Francois A. Padovani , Michael B. Miller , James A. Moore , James H. Fowler , Malcom N. June , James D. Matthews , T. R. Morton , Norbert A. Stotko , Lewis B. Palmer
发明人： Francois A. Padovani , Michael B. Miller , James A. Moore , James H. Fowler , Malcom N. June , James D. Matthews , T. R. Morton , Norbert A. Stotko , Lewis B. Palmer
CPC分类号： B01J8/1836 , C01B33/02 , B01J2208/00132 , B01J2208/00194 , B01J2208/00274 , B01J2208/00371 , B01J2208/00407 , B01J2208/00415 , B01J2208/0053
摘要： A balanced, closed cycle silicon refinery system has been developed for producing electronic grade silicon from industrial grade silicon. Impurities comprising approximately 1% of the industrial grade silicon are removed in the refinery system to produce the purified silicon, while only a relatively small percentage of make-up chemicals are added to the system. In the refinery, hydrogen chloride is reacted with the impure silicon in a halide reactor to provide trichlorosilane and silicon tetrachloride and hydrogen. The trichlorosilane and/or silicon tetrachloride are passed through purification means, and then reacted with the hydrogen from the halide reactor in a fluidized bed reactor to produce the purified silicon and an effluent comprised of unreacted trichlorosilane, silicon tetrachloride, hydrogen, and the by-product hydrogen chloride. These materials are passed through a separator and the trichlorosilane and silicon tetrachloride and hydrogen are returned to the silicon reactor while the hydrogen chloride is returned to the halide reactor to be reacted with additional industrial grade silicon.
摘要翻译： 已经开发了一种平衡的封闭循环硅精炼系统，用于从工业级硅生产电子级硅。 包含大约1％的工业级硅的杂质在炼油系统中被除去以产生纯化的硅，而仅将相对小百分比的化妆品添加到系统中。 在炼油厂，氯化氢与卤化物反应器中的不纯硅反应，得到三氯硅烷和四氯化硅和氢气。 三氯硅烷和/或四氯化硅通过纯化装置，然后在流化床反应器中与来自卤化物反应器的氢气反应，以产生纯化的硅和由未反应的三氯硅烷，四氯化硅，氢气和副产物组成的流出物， 产物氯化氢。 将这些材料通过分离器，并将三氯硅烷和四氯化硅和氢气返回到硅反应器，同时氯化氢返回到卤化物反应器以与另外的工业级硅反应。
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公开(公告)号：US4207360A
公开(公告)日：1980-06-10
申请号：US627635
申请日：1975-10-31
申请人： Francois A. Padovani
发明人： Francois A. Padovani
CPC分类号： C01B33/02 , Y10S117/901
摘要： In the production of elemental silicon by chemical vapor deposition on a particulate seed bed, the continuous generation of seed particles for use or recycle is achieved by the maintenance of a separate, subsidiary reaction zone at a temperature which favors breakage of product particles; while a higher temperature, favorable for deposition, is maintained in the principal reaction zone. The separate reaction zones may be established in separate reactors, or in a single reactor.
摘要翻译： 在通过化学气相沉积在颗粒状种子床上生产元素硅时，连续生成用于或循环的种子颗粒通过在有利于产品颗粒破坏的温度下维持单独的辅助反应区来实现; 而主反应区保持较高的温度，有利于沉积。 单独的反应区可以在单独的反应器中或在单个反应器中建立。
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公开(公告)号：US3983264A
公开(公告)日：1976-09-28
申请号：US434464
申请日：1974-01-18
IPC分类号： H01L21/285 , H01L21/443 , H01L29/45 , B01D3/06
CPC分类号： H01L29/452 , H01L21/28512 , H01L21/28575 , H01L21/443 , H01L29/456
摘要： Ohmic contacts to semiconductor surfaces are fabricated by a process which includes the formation of an adherent, uniform insulating film at the interface between the semiconductor surface and the metallization layer. The insulating film contains stationary charges of sign opposite to the sign of the conductivity of the semiconductor whereby image charges are introduced in the semiconductor. These image charges are located near the semiconductor surface and are of sufficient density to induce the formation of an accumulation layer. The minimum charge density required in the insulating layer is determined by the density of the surface states, Q.sub.ss, in the semiconductor. Minimum Q.sub.ss for silicon is about 5 .times. 10.sup.10 charges/cm.sup.2. The structure thus formed will present an electrical resistance resulting almost solely from the tunneling resistance of the insulating layer. Such a resistance is far smaller than the resistance one would observe in a structure consisting only of the semiconductor and metallization layer because the resistance of the structure is dominated by the resistance of the Schottky barrier formed at the metal-semiconductor interface. For example, just prior to metallization, an oxide-masked silicon wafer is subjected to argon ion bombardment for surface cleaning and activation, followed by oxygen ion bombardment for a time sufficient to form a uniform layer of silicon oxide having a thickness on the order of about 20 Angstroms. Subsequent metallization produces a specific contact resistance of about 5 .times. 10.sup.-.sup.7 ohm-cm.sup.2 on a silicon region having a resistivity of 1.0 ohm-cm, without previous contact diffusion or subsequent metal-semiconductor annealing.
摘要翻译： 通过包括在半导体表面和金属化层之间的界面处形成粘附的均匀绝缘膜的工艺来制造与半导体表面的欧姆接触。 绝缘膜包含与半导体的电导率的符号相反的符号的固定电荷，由此在半导体中引入图像电荷。 这些图像电荷位于半导体表面附近并且具有足够的密度以诱导积聚层的形成。 绝缘层中所需的最小电荷密度由半导体中的表面状态Qss的密度决定。 硅的最小Qss约为5×10 10电荷/ cm 2。 这样形成的结构将呈现几乎完全由绝缘层的隧穿电阻产生的电阻。 这种电阻远远小于仅由半导体和金属化层构成的结构中的电阻，因为结构的电阻由在金属 - 半导体界面处形成的肖特基势垒的电阻支配。 例如，在金属化之前，对氧化物掩模的硅晶片进行氩离子轰击以进行表面清洁和活化，随后进行氧离子轰击足以形成厚度依次为的均匀的氧化硅层 约20埃 随后的金属化在具有1.0欧姆 - 厘米电阻率的硅区域上产生约5×10 -7欧姆 - 厘米2的特定接触电阻，而无需先前的接触扩散或随后的金属 - 半导体退火。
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