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13 条记录 (耗时 0.014 秒)

    Method for backside alignment of photo-processes using standard front side alignment tools
    2.
    发明授权
    Method for backside alignment of photo-processes using standard front side alignment tools 失效
    使用标准正面对准工具对照片工艺进行背面对齐的方法

    公开(公告)号：US06861186B1

    公开(公告)日：2005-03-01

    申请号：US10605368

    申请日：2003-09-25

    申请人： Francois Pagette ,  Christopher M. Schnabel

    发明人： Francois Pagette ,  Christopher M. Schnabel

    IPC分类号： G01B11/00 ,  G03F7/20 ,  G03F9/00

    CPC分类号： G03F7/70425 ,  G03F9/7003 ,  G03F9/7084

    摘要： An image of an integrated circuit chip and optical kerf and their mirror image are formed within a single optical field. When a substrate pattern using this process is flipped over or reversed, the processed pattern appears the same as on the first side, equal to its own mirror image. Prior to the backside lithography, a portion of the second side is removed to allow detection of alignment marks on the first side from the second side of the substrate. Once the alignment marks are detected, the lithography continues as though the substrate was not flipped over at all.

    摘要翻译： 在单个光场内形成集成电路芯片和光学切口及其镜像的图像。 当使用该处理的基板图案被翻转或反转时，处理图案显示与第一侧相同，等于其自己的镜像。 在背面光刻之前，去除第二侧的一部分以允许从衬底的第二侧检测第一侧上的对准标记。 一旦检测到对准标记，就像基片完全没有翻转一样，光刻继续。

    Method of fabricating a bipolar transistor having reduced collector-base capacitance
    7.
    发明授权
    Method of fabricating a bipolar transistor having reduced collector-base capacitance 失效
    制造具有减小的集电极 - 基极电容的双极晶体管的方法

    公开(公告)号：US07462547B2

    公开(公告)日：2008-12-09

    申请号：US11633380

    申请日：2006-12-04

    申请人： Hiroyuki Akatsu ,  Rama Divakaruni ,  Marwan Khater ,  Christopher M. Schnabel ,  William Tonti

    发明人： Hiroyuki Akatsu ,  Rama Divakaruni ,  Marwan Khater ,  Christopher M. Schnabel ,  William Tonti

    IPC分类号： H01L21/331 ,  H01L27/082

    CPC分类号： H01L29/66242 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0821

    摘要： A method is provided for fabricating a bipolar transistor that includes growing an epitaxial layer onto an underlaying region having a low dopant concentration and a trench isolation region defining the edges of an active region layer, implanting a portion of the epitaxial layer through a mask to define a collector region having a relatively high dopant concentration, the collector region laterally adjoining a second region of the epitaxial layer having the low dopant concentration; forming an intrinsic base layer overlying the collector region and the second region, the intrinsic base layer including an epitaxial region in conductive communication with the collector region; forming a low-capacitance region laterally separated from the collector region by the second region, the low-capacitance region including a dielectric region disposed in an undercut directly underlying the intrinsic base layer; and forming an emitter layer overlying the intrinsic base layer.

    摘要翻译： 提供了一种用于制造双极晶体管的方法，该双极晶体管包括将外延层生长到具有低掺杂剂浓度的衬底区域和限定有源区域层的边缘的沟槽隔离区域，通过掩模注入外延层的一部分以限定 具有相对较高掺杂剂浓度的集电极区域，所述集电极区域横向邻接所述外延层的具有低掺杂浓度的第二区域; 形成覆盖所述集电极区域和所述第二区域的本征基极层，所述本征基极层包括与所述集电极区域导通连通的外延区域; 形成由所述第二区域与所述集电极区域横向分离的低电容区域，所述低电容区域包括设置在所述本征基极层下方的底切处的电介质区域; 并形成覆盖本征基层的发射极层。

    MICRO-ELECTROMECHANICAL SUB-ASSEMBLY HAVING AN ON-CHIP TRANSFER MECHANISM
    8.
    发明申请
    MICRO-ELECTROMECHANICAL SUB-ASSEMBLY HAVING AN ON-CHIP TRANSFER MECHANISM 失效
    具有片上传输机制的微电子组件

    公开(公告)号：US20090019691A1

    公开(公告)日：2009-01-22

    申请号：US10597012

    申请日：2004-01-15

    申请人： Christopher M. Schnabel ,  Peter A. Smith ,  John E. Florkey ,  Richard P. Volant

    发明人： Christopher M. Schnabel ,  Peter A. Smith ,  John E. Florkey ,  Richard P. Volant

    IPC分类号： H05K3/30

    CPC分类号： B81C3/002 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/53178 ,  Y10T29/53183 ,  Y10T29/53187

    摘要： Carriers (10) holding parts (50) for assembling complex MEMS devices are transported to a central assembly location. The parts are stacked in a pre-assigned order and later released from their carriers. Alternatively, they are positioned over the appropriate location and released so as to fall into position as needed. The assembly area (100) includes a cavity below the plane of the carriers such that the parts held within the carrier drop into the cavity. Heating elements are integrated into the cavity to assist in the release of the parts. The cavity is supplied with parts by one or more carriers which are move around by any number of MEMS drive systems (200, 250). The cavity and some of the MEMS assembled therein deliver with precision amounts of materials as required suitable for biomedical applications, or may be processed in-situ, as in an on-chip laboratory.

    摘要翻译： 用于组装复杂MEMS器件的载体（10）保持部件（50）被运输到中心组装位置。 这些部件以预先分配的顺序堆叠，然后从其运营商释放。 或者，它们被定位在适当的位置上并被释放以便根据需要落入位置。 组装区域（100）包括在载体平面下方的空腔，使得保持在载体内的部分落入空腔内。 加热元件集成到腔体中以帮助部件的释放。 空腔由一个或多个载体提供，该载体通过任何数量的MEMS驱动系统（200,250）移动。 组装在其中的腔和一些MEMS提供精确量的材料，适合于生物医学应用，或者可以像在片上实验室一样原位加工。