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公开(公告)号：US07688946B2
公开(公告)日：2010-03-30
申请号：US11666368
申请日：2005-10-24
IPC分类号： G01N23/20
摘要： The adhesion between two layers, in particular two thin layers of a microelectronic device, is a data item of importance. It was found that the closure ratio of the interface could be used, in non-destructive manner, to determine a measurement of bond energy. A method and a device using a magnitude characteristic of this length are described, in particular using low incidence X-ray reflection and electronic density at the interface.
摘要翻译： 两层之间的粘附，特别是微电子器件的两个薄层，是重要的数据项。 已经发现界面的封闭比可以以非破坏性方式用于确定键能的测量。 具体地说，使用该长度的幅度特性的方法和装置，特别是在界面处使用低入射X射线反射和电子密度。
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公开(公告)号：US20080063143A1
公开(公告)日：2008-03-13
申请号：US11666368
申请日：2005-10-24
IPC分类号： G01N23/20
摘要： The adhesion between two layers, in particular two thin layers of a microelectronic device, is a data item of importance. It was found that the closure ratio of the interface could be used, in non-destructive manner, to determine a measurement of bond energy. A method and a device using a magnitude characteristic of this length are described, in particular using low incidence X-ray reflection and electronic density at the interface.
摘要翻译： 两层之间的粘附，特别是微电子器件的两个薄层，是重要的数据项。 已经发现界面的封闭比可以以非破坏性方式用于确定键能的测量。 具体地说，使用该长度的幅度特性的方法和装置，特别是在界面处使用低入射X射线反射和电子密度。
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公开(公告)号：US20090162991A1
公开(公告)日：2009-06-25
申请号：US12296250
申请日：2007-04-06
CPC分类号： C09J5/06
摘要： The invention relates to a process for producing a bond between a first and a second substrate (2, 4), comprising: a) a step of preparing surfaces (6, 8) to be assembled, b) an assembly of these two surfaces, by direct molecular bonding, c) a heat treatment step involving at least maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.
摘要翻译： 本发明涉及一种用于在第一和第二基底（2,4）之间产生粘结的方法，包括：a）制备待组装的表面（6,8）的步骤，b）这两个表面的组装， 通过直接分子键合，c）热处理步骤，其至少将温度保持在50℃至100℃的范围内至少1小时。
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4.发明申请公开(公告)号：US20110129986A1
公开(公告)日：2011-06-02
申请号：US12994792
申请日：2009-04-28
申请人： Laure Libralesso , Hubert Moriceau , Christophe Morales , Francois Rieutord , Caroline Ventosa , Thierry Chevolleau
发明人： Laure Libralesso , Hubert Moriceau , Christophe Morales , Francois Rieutord , Caroline Ventosa , Thierry Chevolleau
IPC分类号： H01L21/30
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5 nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.
摘要翻译： 通过使至少一个板的薄层经受表面处理步骤，形成厚度小于或等于的氮氧化硅表面薄膜的表面处理步骤，将在其表面上包含薄层硅或氧化硅的两个板接合 5nm。 薄膜由电感耦合等离子体源产生的氮基等离子体进行。 此外，在表面处理步骤期间，等离子体和支撑所述板的衬底保持器之间施加的电位差小于50V，有利地小于15V，优选为零。 这使得能够获得无缺陷的接合界面，而与在两个板的各个薄层之间的接触步骤之后进行的任何热处理的温度无关。
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公开(公告)号：US08530331B2
公开(公告)日：2013-09-10
申请号：US13273982
申请日：2011-10-14
IPC分类号： H01L21/30
CPC分类号： C09J5/06
摘要： The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.
摘要翻译： 本发明涉及一种用于在第一和第二基底之间产生粘结的方法。 该方法包括制备要组装的基底的表面，并且通过直接分子键合来附着表面以形成这两个表面的组合。 然后对组件进行热处理，其包括将温度保持在50℃至100℃的范围内至少1小时。
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公开(公告)号：US07702072B2
公开(公告)日：2010-04-20
申请号：US11814330
申请日：2006-01-20
申请人： Francois Rieutord
发明人： Francois Rieutord
CPC分类号： G21K1/06 , G21K2201/062 , G21K2201/067 , Y10T29/49826
摘要： The invention relates to a monochromator device for selecting at least one wavelength band from incident radiation in a given wavelength range. The monochromator device may include at least one optical layer of a monocrystalline material having a crystallographic line that is adapted to the at least one wavelength band to be selected; and a mechanical substrate. The at least one optical layer and the mechanical substrate are assembled by molecular bonding.
摘要翻译： 本发明涉及一种用于从给定波长范围内的入射辐射中选择至少一个波长带的单色仪装置。 单色器装置可以包括至少一个单晶材料的光学层，其具有适于要选择的至少一个波长带的结晶线; 和机械基板。 通过分子键合装配至少一个光学层和机械衬底。
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公开(公告)号：US20080279332A1
公开(公告)日：2008-11-13
申请号：US11814330
申请日：2006-01-20
申请人： Francois Rieutord
发明人： Francois Rieutord
IPC分类号： G21K1/06
CPC分类号： G21K1/06 , G21K2201/062 , G21K2201/067 , Y10T29/49826
摘要： The invention relates to a monochromator device for selecting at least one wavelength band from incident radiation in a given wavelength range. The monochromator device may include at least one optical layer of a monocrystalline material having a crystallographic line that is adapted to the at least one wavelength band to be selected; and a mechanical substrate. The at least one optical layer and the mechanical substrate are assembled by molecular bonding.
摘要翻译： 本发明涉及一种用于从给定波长范围内的入射辐射中选择至少一个波长带的单色仪装置。 单色器装置可以包括至少一个单晶材料的光学层，其具有适于要选择的至少一个波长带的结晶线; 和机械基板。 通过分子键合装配至少一个光学层和机械衬底。
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