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1.发明授权Memory cell configuration, method for fabricating it and methods for operating it 失效存储单元配置，其制造方法及其操作方法公开(公告)号：US06229169B1
公开(公告)日：2001-05-08
申请号：US09213724
申请日：1998-12-17
申请人： Franz Hofmann , Wolfgang Krautschneider , Wolfgang Rösner , Lothar Risch , Till Schlösser , Paul-Werner Basse
发明人： Franz Hofmann , Wolfgang Krautschneider , Wolfgang Rösner , Lothar Risch , Till Schlösser , Paul-Werner Basse
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/108 , H01L27/10823 , H01L27/10876 , H01L27/115 , H01L27/11507
摘要： A memory cell configuration contains a multiplicity of memory cells in a semiconductor substrate. Each of the memory cells has a selection transistor connected between a bit line and a storage element. The memory cells can each be driven via a first word line and a second word line, the first word line and the second word line crossing one another. The memory cell configuration is, in particular, a DRAM configuration.
摘要翻译： 存储单元配置在半导体衬底中包含多个存储单元。 每个存储单元具有连接在位线和存储元件之间的选择晶体管。 每个存储器单元可以通过第一字线和第二字线驱动，第一字线和第二字线彼此交叉。 存储单元配置尤其是DRAM配置。
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2.发明授权
公开(公告)号：US6125050A
公开(公告)日：2000-09-26
申请号：US335365
申请日：1999-06-17
IPC分类号： H01L27/112 , G11C5/02 , H01L21/8246
CPC分类号： H01L27/0207 , H01L27/1126 , H01L27/11293 , H01L27/11803
摘要： Parallel lines, for example bit lines in a memory cell configuration formed of doped regions in a semiconductor substrate, are driven by electrically connecting a number of the lines to one another and to a common node. A number of selection lines extend transversely to the lines. MOS transistors are arranged at the points of intersection and are connected in series along one of the lines. The gate electrode of the MOS transistors is formed by the corresponding selection line. At least one MOS transistor in each of the parallel lines has a higher threshold voltage than the others.
摘要翻译： 平行线，例如由半导体衬底中的掺杂区形成的存储单元配置中的位线，通过将多个线彼此电连接并连接到公共节点来驱动。 多条选择线横向延伸。 MOS晶体管布置在交点处，并沿着一条线串联连接。 MOS晶体管的栅电极由相应的选择线形成。 每条并行线路中的至少一个MOS晶体管的阈值电压高于其他。
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公开(公告)号：US06576948B2
公开(公告)日：2003-06-10
申请号：US09873231
申请日：2001-06-04
IPC分类号： H01L27108
CPC分类号： H01L27/108
摘要： An integrated circuit contains a planar first transistor and a diode. The diode is connected between a first source/drain region of the first transistor and a gate electrode of the first transistor such that a charge is impeded from discharging from the gate electrode to the first source/drain region. A diode layer that is part of the diode is disposed on a portion of the first source/drain region. A conductive structure that is an additional part of the diode is disposed above a portion of the gate electrode and is disposed on the diode layer. The diode can be configured as a tunnel diode. The diode layer can be produced by thermal oxidation. Only one mask is required for producing the diode. A capacitor can be disposed above the diode. The first capacitor electrode of the capacitor is connected to the conductive structure.
摘要翻译： 集成电路包含平面第一晶体管和二极管。 二极管连接在第一晶体管的第一源极/漏极区域和第一晶体管的栅电极之间，使得电荷被阻止从栅电极放电到第一源极/漏极区域。 作为二极管的一部分的二极管层设置在第一源极/漏极区域的一部分上。 作为二极管的附加部分的导电结构设置在栅电极的一部分上方并且设置在二极管层上。 二极管可以配置为隧道二极管。 二极管层可以通过热氧化生产。 制造二极管只需要一个掩模。 电容器可以设置在二极管的上方。 电容器的第一电容器电极连接到导电结构。
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4.发明授权Integrated dynamic memory cell having a small area of extent, and a method for its production 失效具有小范围的集成动态存储单元及其制造方法公开(公告)号：US06534820B2
公开(公告)日：2003-03-18
申请号：US09745565
申请日：2000-12-21
IPC分类号： H01L29788
CPC分类号： H01L27/10844 , H01L27/108 , H01L27/10876
摘要： An integrated dynamic memory cell having a small area of extent on a semiconductor substrate is described. The memory cell has a selection MOSFET with a gate connection area that is connected to a word line, a source connection doping area which is connected to a bit line, and a drain connection doping area. A memory MOSFET has a gate connection area which is connected via a thin dielectric layer to a connection doping region which connects a source connection doping area of the memory MOSFET to the drain connection doping area of the selection MOSFET. The memory MOSFET further has a drain connection doping area that is connected to a supply voltage. The selection and memory MOSFETs are disposed on opposite sidewalls of a trench, which is etched in the substrate, and the connection doping region forms a bottom of the trench.
摘要翻译： 描述在半导体衬底上具有小面积范围的集成动态存储单元。 存储单元具有选择MOSFET，其具有连接到字线的栅极连接区域，连接到位线的源极连接掺杂区域和漏极连接掺杂区域。 存储器MOSFET具有通过薄介电层连接到将存储器MOSFET的源极连接掺杂区域连接到选择MOSFET的漏极连接掺杂区域的连接掺杂区域的栅极连接区域。 存储器MOSFET还具有连接到电源电压的漏极连接掺杂区域。 选择和存储器MOSFET被布置在沟槽的相对的侧壁上，沟槽被蚀刻在衬底中，并且连接掺杂区域形成沟槽的底部。
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公开(公告)号：US06274453B1
公开(公告)日：2001-08-14
申请号：US09405916
申请日：1999-09-24
IPC分类号： H01L2120
CPC分类号： H01L27/10876 , H01L27/10805 , H01L27/10808
摘要： A memory cell configuration with many ferroelectric or dynamic memory cells provided in a semiconductor substrate. Alternating trenches and lands extend parallel in a longitudinal direction of a main face of the semiconductor substrate. A channel stop layer is buried in the lands and divides the semiconductor substrate into a lower region that includes the trench bottoms and an upper region that includes the land ridges. First planar selection transistors with intervening trench channel stop regions are disposed along the trench bottoms. Second planar selection transistors with intervening land channel stop regions are disposed along the land ridges. The first and second selection transistors have respective source, gate, channel and drain regions, which are offset longitudinally from one another such that source and drain regions of the first and second selection transistors alternate in the transverse direction in the main face of the semiconductor substrate. Isolated word lines are provided which extend in the transverse direction along the main face for triggering the first and second selection transistors in the respective gate regions. Isolated bit lines are provided which extend in an oblique direction along the main face for connecting the first and second selection transistors in the respective source regions. And preferably ferroelectric capacitors are each connected to the drain regions of applicable selection transistors via capacitor contacts.
摘要翻译： 具有设置在半导体衬底中的许多铁电或动态存储单元的存储单元配置。 交替沟槽和焊盘在半导体衬底的主面的纵向方向上平行延伸。 沟道阻挡层埋在焊盘中，并将半导体衬底分成包括沟槽底部的下部区域和包括焊盘脊的上部区域。 具有中间沟槽沟道阻挡区域的第一平面选择晶体管沿沟槽底部设置。 具有中间的槽脊通道停止区域的第二平面选择晶体管沿着脊脊布置。 第一和第二选择晶体管具有各自的源极，栅极，沟道和漏极区域，它们彼此纵向偏移，使得第一和第二选择晶体管的源极和漏极区域在半导体衬底的主面中在横向方向上交替 。 提供隔离的字线，其沿着主面沿横向方向延伸，用于触发各个栅极区域中的第一和第二选择晶体管。 提供了沿着主面沿倾斜方向延伸的隔离位线，用于连接各个源极区域中的第一和第二选择晶体管。 并且优选地，铁电电容器通过电容器触点连接到适用的选择晶体管的漏极区域。
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公开(公告)号：US06438022B2
公开(公告)日：2002-08-20
申请号：US09854259
申请日：2001-05-10
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11507
摘要： The memory cells of a memory cell configuration each have a selection transistor, a memory transistor and a ferroelectric capacitor. The selection transistor and the memory transistor are connected in series. The ferroelectric capacitor is connected between a control electrode of the memory transistor and a first terminal of the selection transistor.
摘要翻译： 存储单元结构的存储单元分别具有选择晶体管，存储晶体管和铁电电容器。 选择晶体管和存储晶体管串联连接。 铁电电容器连接在存储晶体管的控制电极和选择晶体管的第一端子之间。
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公开(公告)号：US06399433B2
公开(公告)日：2002-06-04
申请号：US09773218
申请日：2001-01-31
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/55
摘要： A method for producing a storage cell includes forming a polycrystalline silicon layer on a semiconductor body having at least one selection transistor disposed in a first plane. An interspace is formed between two adjacent structures of the layer and one of the adjacent structures of the layer is placed on a surface of a first silicon plug. A cell plate electrode is formed in the interspace and a trench is formed in the layer. The trench reaches as far as the first plug surface and is filled with an insulating layer. The-layer is removed. A storage capacitor having a high-epsilon or ferroelectric dielectric and a storage node electrode is formed. The capacitor is disposed in a second plane in and above the body. The insulating layer is replaced with silicon to form a second silicon plug directly connected to the first plug. The second plug is electrically connected to the storage node electrode, and the first plane is electrically connected to the second plane through the first and second plugs.
摘要翻译： 一种存储单元的制造方法包括在半导体本体上形成多晶硅层，该多晶硅层具有设置在第一平面中的至少一个选择晶体管。 在层的两个相邻结构之间形成间隙，并且该层的相邻结构之一被放置在第一硅插头的表面上。 在该间隙中形成单元板电极，并在该层中形成沟槽。 沟槽达到第一插头表面的最远处，并且填充有绝缘层。 该层被删除。 形成具有高ε或铁电介质的存储电容器和存储节点电极。 电容器设置在身体内和上方的第二平面内。 绝缘层被硅替代以形成直接连接到第一插头的第二硅插头。 第二插头电连接到存储节点电极，第一平面通过第一和第二插头电连接到第二平面。
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公开(公告)号：US07030434B1
公开(公告)日：2006-04-18
申请号：US10089570
申请日：2000-09-28
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609
摘要： A memory transistor and a selection transistor of an image sensor are connected in series and between a bit line (B5) and a reference line (R5). A gate electrode of the selection transistor is connected to a word line (W5), which extends crosswise in relation to the bit line (B5). A diode of the image sensor is switched between a gate electrode (G5) of the memory transistor and a first source/drain area (S/D5) of the memory transistor, which is connected to the selection transistor in such a way is polarized towards the first source/drain area (S/D5) of the memory transistor and in the reverse direction. A photodiode of the image sensor is switched between a voltage connection and either the gate electrode (G5) of the memory transistor or the first source/drain area (S/D5) of the memory transistor in such a way that it is polarized towards the voltage connection and in the reverse direction.
摘要翻译： 图像传感器的存储晶体管和选择晶体管串联连接在位线（B 5）和基准线（R 5）之间。 选择晶体管的栅电极连接到相对于位线（B 5）横向延伸的字线（W 5）。 图像传感器的二极管在存储晶体管的栅电极（G 5）和存储晶体管的第一源极/漏极区域（S / D 5）之间切换，以这样的方式连接到选择晶体管 朝向存储晶体管的第一源极/漏极区域（S / D 5）偏振并且沿相反方向偏振。 图像传感器的光电二极管在存储晶体管的栅电极（G 5）或存储晶体管的第一源/漏区（S / D 5）的电压连接和栅极之间切换，使得其被极化 朝向电压连接和相反方向。
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9.发明授权Method for operating a memory cell configuration having dynamic gain memory cells 有权用于操作具有动态增益存储单元的存储单元配置的方法公开(公告)号：US06442065B1
公开(公告)日：2002-08-27
申请号：US09935356
申请日：2001-08-22
IPC分类号： G11C1140
CPC分类号： G11C11/404 , G11C11/4023
摘要： Each memory cell of a cell configuration includes at least one memory transistor. To write first or second information on the memory cell, a gate electrode of the memory transistor is charged such that a first voltage or a second voltage is applied in the memory transistor. A reading voltage is applied in a second source/drain area of the memory transistor to read first information and second information respectively. The first voltage is applied between the second voltage and the reading voltage. The reading voltage is applied between the first voltage less a threshold voltage of the memory transistor and the second voltage less the threshold voltage of the memory transistor.
摘要翻译： 单元结构的每个存储单元包括至少一个存储晶体管。 为了在存储单元上写入第一或第二信息，对存储晶体管的栅电极进行充电，使得在存储晶体管中施加第一电压或第二电压。 在存储晶体管的第二源极/漏极区域中施加读取电压以分别读取第一信息和第二信息。 第一电压施加在第二电压和读取电压之间。 读取电压施加在较低存储晶体管的阈值电压的第一电压和小于存储晶体管的阈值电压的第二电压之间。
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10.发明授权Method for production of a read-only-memory cell arrangement having vertical MOS transistors 失效用于制造具有垂直MOS晶体管的只读存储单元布置方法
公开(公告)号：US5744393A
公开(公告)日：1998-04-28
申请号：US836175
申请日：1997-04-17
IPC分类号： H01L21/8234 , H01L21/8246 , H01L27/088 , H01L27/112 , H01L29/739 , H01L29/78
CPC分类号： H01L27/112
摘要： A method for production of a read-only-memory cell arrangement having vertical MOS transistors is provided. In order to produce a read-only-memory cell arrangement which has first memory cells having a vertical MOS transistor and second memory cells which do not have a vertical MOS transistor, holes provided with a gate dielectric and a gate electrode are etched in a silicon substrate with a layer sequencing corresponding to a source, a channel and a drain for the first memory cells. Insulation trenches whose separation is preferably equal to their width are produced for insulation of adjacent memory cells.
摘要翻译： PCT No.PCT / DE95 / 01365 Sec。 371日期1997年04月17日 102（e）日期1997年4月17日PCT提交1995年10月5日PCT公布。 出版物WO96 / 13064 日期：1996年5月2日提供具有垂直MOS晶体管的只读存储单元布置方法。 为了产生具有垂直MOS晶体管的第一存储单元和不具有垂直MOS晶体管的第二存储单元的只读存储单元布置，在栅极电介质和栅电极中设置的孔被蚀刻在硅 具有对应于第一存储器单元的源极，沟道和漏极的层序列的衬底。 为了绝缘相邻的存储单元而产生绝缘沟槽，其隔离优选等于其宽度。
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