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公开(公告)号：US5714404A
公开(公告)日：1998-02-03
申请号：US154347
申请日：1993-11-18
CPC分类号： H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.
摘要翻译： 一种用于在低温（或高温）基板上制造多晶薄膜的方法，其使用足够低的处理温度以避免损坏基板，然后用至少一个脉冲进行瞬时加热薄膜的选择层 激光或其他均质化光束源。 选择脉冲长度，使得感兴趣的层被瞬时加热到允许重结晶和/或掺杂剂活化的温度，同时将衬底保持在足够低的温度以避免损坏衬底。 该方法特别适用于制造太阳能电池。
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公开(公告)号：US5425860A
公开(公告)日：1995-06-20
申请号：US43820
申请日：1993-04-07
CPC分类号： C23C14/5813 , C23C14/0635 , C23C14/58 , C23C14/5846
摘要： A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
摘要翻译： 通过将非晶硅和碳的薄膜共沉积到衬底上来生产β碳化硅薄膜的方法，然后通过暴露于脉冲能量源（例如准分子激光器）照射膜以引起β-SiC化合物的形成 。 可以通过在照射期间引入掺杂气体来产生掺杂的β-SiC。 已经生产了厚度为0.5-1微米的单层，其中较厚的层通过多个处理步骤产生。 由于β碳化硅在27°-730℃的宽温度范围内的电子传输性能优于α碳化硅的这些性能，因此它们具有广泛的应用，例如在高温半导体中，包括异质结双极晶体管 和功率器件，以及高带隙太阳能电池阵列，超硬涂层，发光二极管，传感器等。
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3.发明授权
公开(公告)号：US5346850A
公开(公告)日：1994-09-13
申请号：US968561
申请日：1992-10-29
IPC分类号： C30B1/02 , H01L21/20 , H01L21/3215 , H01L29/786 , C30B31/20
CPC分类号： H01L29/78603 , C30B1/023 , C30B29/06 , H01L21/2026 , H01L21/32155
摘要： A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.
摘要翻译： 在选择的环境中使用短脉冲高能源在低温塑料基板上结晶和掺杂非晶硅（a-Si）的方法或工艺，而不会在衬底中积累热量。 在选择的环境中，诸如BF 3和PF 5之间的a-Si的脉冲能量处理将形成具有改善的迁移率，寿命和漂移和扩散的掺杂微晶或多晶硅（pc-Si）区或结点 长度和电阻率降低。 该方法或工艺的优点在于，它提供了在低成本，低温，透明塑料基材上的高能材料加工。 使用高（> 900℃）的脉冲激光加工，可以在薄膜中实现局部处理温度，基板温度升高很少，因为衬底温度不超过180℃超过几微秒。 与使用聚酰亚胺等高温塑料相比，该方法能够使用不能耐受持续的加工温度（高于180℃）的塑料，但成本低得多，对紫外线的耐受性高，强度高，透明性好。
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