Matrix imaging device comprising at least one set of photosites with multiple integration times
    1.
    发明授权
    Matrix imaging device comprising at least one set of photosites with multiple integration times 有权
    矩阵成像装置包括具有多个积分时间的至少一组光电子集

    公开(公告)号:US08791401B2

    公开(公告)日:2014-07-29

    申请号:US13484417

    申请日:2012-05-31

    IPC分类号: H01L27/148

    摘要: A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.

    摘要翻译: 用于控制像素的方法可以包括第一和第二光电子,每个具有光电二极管和电荷传输晶体管,读节点和电子读取元件,所有这些都是所有光电子所共有的。 所述方法可以包括在第一周期期间在第一光电二极管中的光生电荷的累积,在比第一周期短的第二周期期间光生电荷在第二光电二极管中的累积,对应于 积分在具有最高不饱和强度或饱和信号的光电二极管中的电荷量以及所选信号的数字化。

    MATRIX IMAGING DEVICE COMPRISING AT LEAST ONE SET OF PHOTOSITES WITH MULTIPLE INTEGRATION TIMES
    2.
    发明申请
    MATRIX IMAGING DEVICE COMPRISING AT LEAST ONE SET OF PHOTOSITES WITH MULTIPLE INTEGRATION TIMES 有权
    具有多个集成时间的至少一组光照的矩阵成像设备

    公开(公告)号:US20120305750A1

    公开(公告)日:2012-12-06

    申请号:US13484417

    申请日:2012-05-31

    IPC分类号: H01L27/148

    摘要: A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.

    摘要翻译: 用于控制像素的方法可以包括第一和第二光电子,每个具有光电二极管和电荷传输晶体管,读节点和电子读取元件,所有这些都是所有光电子所共有的。 所述方法可以包括在第一周期期间在第一光电二极管中的光生电荷的累积,在比第一周期短的第二周期期间光生电荷在第二光电二极管中的累积,对应于 积分在具有最高不饱和强度或饱和信号的光电二极管中的电荷量以及所选信号的数字化。

    PIXEL CIRCUIT FOR GLOBAL ELECTRONIC SHUTTER
    3.
    发明申请
    PIXEL CIRCUIT FOR GLOBAL ELECTRONIC SHUTTER 有权
    全球电子快门的像素电路

    公开(公告)号:US20090200454A1

    公开(公告)日:2009-08-13

    申请号:US12350677

    申请日:2009-01-08

    IPC分类号: H01L31/00 H01L27/00

    摘要: An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.

    摘要翻译: 由像素阵列形成的图像传感器,每个像素包括耦合在第一参考电压和第一开关之间的光电二极管,所述第一开关可操作以将光电二极管连接到第一节点; 电容器,被布置成存储由所述光电二极管累积的电荷,所述电容器耦合在第二参考电压和第二节点之间; 耦合在所述第一和第二节点之间的第二开关,所述第二开关可操作以将所述电容器连接到所述第一节点; 并读取电路,用于读取第二节点处的电压。

    PIXEL READ CIRCUITRY
    4.
    发明申请
    PIXEL READ CIRCUITRY 有权
    像素读取电路

    公开(公告)号:US20090153715A1

    公开(公告)日:2009-06-18

    申请号:US12333011

    申请日:2008-12-11

    CPC分类号: H04N5/35581

    摘要: A method of reading voltages from an image sensor having an array of pixels, each pixel Having at least one photodiode connectable to a storage node, the method including: controlling each pixel in a row of pixels to store and output a first voltage value at a first instance, a second voltage value at a second instance, and a third voltage value at a third instance, the first, second and third voltage values being representative of charge accumulated by the photodiodes during an integration phase; comparing the first voltage value from each pixel with a reference threshold; sampling for each pixel, based on the comparison, one of the second and third voltage values: and generating an output pixel value based on the sampled one of the second and third voltage values

    摘要翻译: 一种从具有像素阵列的图像传感器读取电压的方法,每个像素具有可连接到存储节点的至少一个光电二极管,该方法包括:控制一行像素中的每个像素以存储和输出第一电压值 第一实例,第二实例的第二电压值和第三实例的第三电压值,第一,第二和第三电压值表示在积分阶段期间由光电二极管累积的电荷; 将每个像素的第一电压值与参考阈值进行比较; 基于比较,对于每个像素,对第二和第三电压值之一进行采样,并且基于第二和第三电压值中的一个采样输出像素值

    Image sensor with individually selectable imaging elements
    5.
    发明授权
    Image sensor with individually selectable imaging elements 有权
    图像传感器,可独立选择成像元件

    公开(公告)号:US08921753B2

    公开(公告)日:2014-12-30

    申请号:US13456643

    申请日:2012-04-26

    申请人: Frederic Barbier

    发明人: Frederic Barbier

    摘要: An imaging element includes a photosensor and a transfer transistor to transfer electrical charges from the photosensor to a charge accumulation node. A selector is configured to receive at least two logic selection signals and to supply an activation signal, which is a function of the selection signals, to a control terminal of the transfer transistor. The selector is configured to receive at least two selection signals, each having a positive voltage when it is at a logic value 1 and a negative voltage when it is a logic value 0, and to supply the activation signal having a negative voltage when the imaging element is not selected.

    摘要翻译: 成像元件包括光电传感器和转移晶体管,以将电荷从光传感器转移到电荷累积节点。 选择器被配置为接收至少两个逻辑选择信号并且将作为选择信号的函数的激活信号提供给传输晶体管的控制端子。 选择器被配置为接收至少两个选择信号,当它们处于逻辑值1时,每个选择信号具有正电压,当其为逻辑值0时具有正电压,并且当成像时提供具有负电压的激活信号 元素未被选中。

    IMAGE SENSOR WITH MULTIPLE INTEGRATION PERIODS
    6.
    发明申请
    IMAGE SENSOR WITH MULTIPLE INTEGRATION PERIODS 有权
    具有多个整合期的图像传感器

    公开(公告)号:US20090127438A1

    公开(公告)日:2009-05-21

    申请号:US12273164

    申请日:2008-11-18

    IPC分类号: H01L27/00

    CPC分类号: H04N5/335 H04N5/2355

    摘要: A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration periods; comparing for each pixel in the row, the first voltage values with a reference voltage; and based on the comparison, for each pixel in the row, performing one of: determining a pixel output value based on the first and/or second voltage values; and reading a third voltage value at the end of the third integration period, and determining a pixel output value based on the second and/or third voltage values.

    摘要翻译: 一种从具有像素阵列的图像传感器读取电压的方法,每个像素具有可连接到存储节点的至少一个光电二极管,该方法具有:控制一行像素中的每个像素,以将在光电二极管中累积的电荷传输到第一 在第一积分周期的开始和结束时向存储节点提供阈值,并在第一积分周期结束时读取行中每个像素的存储节点处的第一电压; 控制该行中的像素以在比第一积分周期长的第二积分周期的开始和结束时将累积在光电二极管中的电荷传输到第二阈值到存储节点,并且在存储节点的存储节点处读取第二电压值 在第二积分期间结束的行中的每个像素; 控制一行像素中的每个像素,以在比第一和第二积分周期长的第三积分周期结束时将累积在光电二极管中的电荷传送到存储节点; 比较该行中的每个像素,具有参考电压的第一电压值; 并且基于所述比较,对于所述行中的每个像素,执行以下之一:基于所述第一和/或第二电压值确定像素输出值; 以及在第三积分周期结束时读取第三电压值,以及基于第二和/或第三电压值确定像素输出值。

    PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE
    7.
    发明申请
    PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE 有权
    带低电压的PINNED光电CMOS图像传感器

    公开(公告)号:US20080170147A1

    公开(公告)日:2008-07-17

    申请号:US11959023

    申请日:2007-12-18

    IPC分类号: H04N3/14

    CPC分类号: H04N5/3745 H04N5/3597

    摘要: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    摘要翻译: 一种用于控制图像传感器的装置,包括至少一个感光单元,该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管,所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路,其能够在将光电二极管放电到感测节点期间增加源极的电压。