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公开(公告)号：US07006388B2
公开(公告)日：2006-02-28
申请号：US10650278
申请日：2003-08-28
IPC分类号： G11C11/34
摘要： Disclosed herein are systems and devices having memories with reference-initiated sequential sensing. In one embodiment, a reference-initiated sequential sensing method comprises: forming a first attribute measurement associated with a stored data value in a first memory element; using the first memory element to determine a decision threshold; comparing the first attribute measurement to the decision threshold to determine the stored data value in the first memory element; forming a subsequent attribute measurement associated with a stored data value in a subsequent memory element; and comparing the subsequent attribute value to the decision threshold to determine a data value stored in the subsequent memory element.
摘要翻译： 本文公开了具有参考启动的顺序感测的存储器的系统和设备。 在一个实施例中，参考发起的顺序感测方法包括：在第一存储器元件中形成与存储的数据值相关联的第一属性测量; 使用所述第一存储器元件来确定判定阈值; 将所述第一属性测量与所述判定阈值进行比较，以确定所述第一存储器元件中存储的数据值; 形成与随后的存储器元件中存储的数据值相关联的后续属性测量; 以及将所述后续属性值与所述判定阈值进行比较，以确定存储在所述后续存储元件中的数据值。
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2.发明授权System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device 有权用于确定磁性隧道结存储器件中存储单元的逻辑状态的系统和方法公开(公告)号：US06650562B2
公开(公告)日：2003-11-18
申请号：US10055299
申请日：2002-01-23
IPC分类号： G11C1702
CPC分类号： G11C11/15
摘要： A system and method for determining the logic state of a memory cell in a magnetic tunnel junction (MTJ) memory device based on the ratio of the current through the cell at different bias points are disclosed. A memory cell in an MJT memory device is sequentially subjected to at least two different bias voltages. The current through the cell at each of the bias voltages is measured, and a ratio of the different currents is determined. The ratio is then compared with a predetermined value to determine the logic state of the cell. The predetermined value can be a known value. Alternatively, the predetermined value can be determined by application of the system and method to a reference cell having a known logic state.
摘要翻译： 公开了一种用于基于在不同偏置点处通过单元的电流的比率来确定磁性隧道结（MTJ）存储器件中的存储器单元的逻辑状态的系统和方法。 MJT存储器件中的存储器单元依次经受至少两个不同的偏置电压。 测量在每个偏置电压下通过电池的电流，并确定不同电流的比率。 然后将比率与预定值进行比较，以确定单元的逻辑状态。 预定值可以是已知值。 或者，可以通过将系统和方法应用于具有已知逻辑状态的参考小区来确定预定值。
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公开(公告)号：US06999334B2
公开(公告)日：2006-02-14
申请号：US10660831
申请日：2003-09-12
IPC分类号： G11C17/02
CPC分类号： G11C11/15
摘要： A system and method for determining the logic state of a memory cell in a magnetic tunnel junction (MTJ) memory device based on the ratio of the current through the cell at different bias points are disclosed. A memory cell in an MJT memory device is sequentially subjected to at least two different bias voltages. The current through the cell at each of the bias voltages is measured, and a ratio of the different currents is determined. The ratio is then compared with a predetermined value to determine the logic state of the cell. The predetermined value can be a known value. Alternatively, the predetermined value can be determined by application of the system and method to a reference cell having a known logic state.
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公开(公告)号：US20120189331A1
公开(公告)日：2012-07-26
申请号：US13382175
申请日：2009-07-27
申请人： Anthony Holden , Daniel Beltzer
发明人： Anthony Holden , Daniel Beltzer
CPC分类号： G03G21/0005 , G03G15/08 , G03G21/0094
摘要： An initialization method of an electrophotographic image forming apparatus includes rotating a photosensitive member to receive toner along a width of the photosensitive member prior to activation of a charging unit and to remove the toner with a cleaning unit, and activating the charging unit configured to charge the photosensitive member in response to a determination of a completion of a predetermined number of rotations of the photosensitive member.
摘要翻译： 电子照相图像形成装置的初始化方法包括在启动充电单元之前使感光构件旋转沿着感光构件的宽度接收调色剂，并且用清洁单元去除调色剂，并且激活充电单元， 响应于确定感光构件的预定转数的完成，感光构件。
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公开(公告)号：US20050175044A1
公开(公告)日：2005-08-11
申请号：US10508386
申请日：2003-03-19
申请人： Nick Zakhleniuk , Anthony Holden
发明人： Nick Zakhleniuk , Anthony Holden
IPC分类号： H01S5/0625 , H01S5/34 , H01S3/10 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/06256 , H01S5/3412
摘要： A tuneable laser including a light creating section to generate light and a tuneable section formed of a semiconductor material which utilises the electro-optic effect to achieve a change in the refractive index of the material, Δn, under the influence of an applied field, F, in accordance with the equation: Δn=−½n03[rF+sF2]≡ΔnL+ΔnQ, where no is the refractive index at zero field and ΔnL and ΔnQ are the linear and quadratic contributions to the change in refractive index respectively, r is the linear electro-optic coefficient of the material and s is the quadratic electro-optic coefficient of the material, the tuning section including a waveguide and the material of the waveguide incorporating a plurality of quantum dots and operating in a wavelength region where the value of rF is sufficiently greater than the value of sF2, so as to operate with the dominant effect on Δn being contributed by the linear effect.
摘要翻译： 一种可调激光器，包括产生光的光产生部分和由半导体材料形成的可调部分，其利用电光效应来实现材料的折射率Deltan在施加场的影响下，F ，根据以下等式：Deltan =-½n 3 [rF + sF 2]≡DeltanL < + Deltan其中n
是零场处的折射率，Deltan L和Deltan Q 是 分别对折射率变化的线性和二次贡献，r是材料的线性电光系数，s是材料的二次电光系数，调谐部分包括波导和波导的材料 多个量子点，并且在rF的值足够大于sF 2的值的波长区域中工作，以便与主导ef 对Deltan的影响是由线性效应引起的。 -
公开(公告)号：US20050047219A1
公开(公告)日：2005-03-03
申请号：US10650278
申请日：2003-08-28
申请人： Frederick Perner , Anthony Holden
发明人： Frederick Perner , Anthony Holden
摘要： Disclosed herein are systems and devices having memories with reference-initiated sequential sensing. In one embodiment, a reference-initiated sequential sensing method comprises: forming a first attribute measurement associated with a stored data value in a first memory element; using the first memory element to determine a decision threshold; comparing the first attribute measurement to the decision threshold to determine the stored data value in the first memory element; forming a subsequent attribute measurement associated with a stored data value in a subsequent memory element; and comparing the subsequent attribute value to the decision threshold to determine a data value stored in the subsequent memory element.
摘要翻译： 本文公开了具有参考启动的顺序感测的存储器的系统和设备。 在一个实施例中，参考发起的顺序感测方法包括：在第一存储器元件中形成与存储的数据值相关联的第一属性测量; 使用所述第一存储器元件来确定判定阈值; 将所述第一属性测量与所述判定阈值进行比较，以确定所述第一存储器元件中存储的数据值; 形成与随后的存储器元件中存储的数据值相关联的后续属性测量; 以及将所述随后的属性值与所述判定阈值进行比较，以确定存储在所述后续存储器元件中的数据值。
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公开(公告)号：US07467264B2
公开(公告)日：2008-12-16
申请号：US10607624
申请日：2003-06-27
CPC分类号： G11C8/10
摘要： Methods and apparatuses are disclosed for measuring values of a plurality of memory elements, where the measured values may be indicative of the digital state of a memory element. Calculations may be performed on a plurality of transition-terms associated with the possible transitions in the values between proximate memory elements. The digital state of memory elements may be determined using the calculations performed on the plurality of transition-terms.
摘要翻译： 公开了用于测量多个存储元件的值的方法和装置，其中测量值可以指示存储元件的数字状态。 可以对与相邻存储器元件之间的值中的可能转换相关联的多个转换项执行计算。 存储器元件的数字状态可以使用对多个转换项执行的计算来确定。
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8.发明申请公开(公告)号：US20070092272A1
公开(公告)日：2007-04-26
申请号：US11258255
申请日：2005-10-25
申请人： Scott Hymas , Patrick Dougherty , Anthony Holden
发明人： Scott Hymas , Patrick Dougherty , Anthony Holden
IPC分类号： G03G15/08
CPC分类号： G01F23/226 , G03G15/0856 , G03G15/0858 , G03G2215/0888
摘要： An amount of material in a container is determined by measuring a time it takes for an object to move through the material, and determining the amount of material based on the measured time.
摘要翻译： 通过测量物体通过材料移动所花费的时间，并且基于测量的时间来确定材料量来确定容器中的材料量。
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公开(公告)号：US20050259699A1
公开(公告)日：2005-11-24
申请号：US10514666
申请日：2003-05-15
IPC分类号： H01S20060101 , H01S3/10 , H01S5/0625 , H01S5/125 , H01S5/34
CPC分类号： H01S5/06256 , B82Y10/00 , B82Y20/00 , H01S5/3412
摘要： A tuneable laser including a light creating section to generate light and a tuneable section formed of a semiconductor material which utilises the current injection free electron plasma effect to achieve a change in the refractive index of the material, wherein the tuneable section has a plurality of quantum dots having enhanced polarsability compared to the bulk semiconductor material surrounding the quantum dots.
摘要翻译： 一种可调激光器，包括产生光的光产生部分和由半导体材料形成的可调节部分，其利用电流注入自由电子等离子体效应来实现材料的折射率的变化，其中可调部分具有多个量子 与围绕量子点的体半导体材料相比，点具有增强的极化性。
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公开(公告)号：US20050083733A1
公开(公告)日：2005-04-21
申请号：US10686271
申请日：2003-10-15
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/15
摘要： A method for reading the magnetization orientation of a memory cell includes applying a magnetic field to the memory cell, observing any change in resistance of the memory cell as the magnetic field is applied, and determining the magnetization orientation based upon the observed change in resistance of the memory cell.
摘要翻译： 用于读取存储单元的磁化取向的方法包括：向存储单元施加磁场，观察作为施加磁场的存储单元的电阻的任何变化，以及根据观察到的电阻变化确定磁化取向 存储单元。
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