公开(公告)号：US20160172318A1

公开(公告)日：2016-06-16

申请号：US15050176

申请日：2016-02-22

Applicant: Freescale Semiconductor, Inc.

Inventor： Lakshminarayan Viswanathan ,  Jeffrey K. Jones ,  Scott D. Marshall

IPC: H01L23/66 ,  H01L23/495 ,  H01L23/047

CPC classification number: H01L23/66 ,  H01L23/047 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

Abstract translation: 半导体器件（例如，RF器件）的实施例包括衬底，隔离结构，有源器件，引线和电路。 隔离结构耦合到衬底，并且包括开口。 有源器件区域由通过开口暴露的衬底表面的一部分限定。 有源器件耦合到有源器件区域内的衬底表面。 电路电耦合在有源器件和引线之间。 电路包括位于有源器件区域外的一个或多个元件（例如，物理耦合到隔离结构和/或在引线下方）。 位于有源器件区域之外的元件可以包括封装端接电路和/或阻抗匹配电路的元件。 实施例还包括制造这种半导体器件的方法。

公开(公告)号：US09748185B2

公开(公告)日：2017-08-29

申请号：US15050176

申请日：2016-02-22

Applicant: Freescale Semiconductor, Inc.

Inventor： Lakshminarayan Viswanathan ,  Jeffrey K. Jones ,  Scott D. Marshall

IPC: H01L27/108 ,  H01L29/94 ,  H01L31/119 ,  H01L23/66 ,  H01L23/047 ,  H01L23/00 ,  H01L23/495

CPC classification number: H01L23/66 ,  H01L23/047 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.