公开(公告)号：US5024423A

公开(公告)日：1991-06-18

申请号：US393779

申请日：1989-08-15

申请人： Fukuji Matsumoto ,  Yoshio Tawara ,  Michio Hayashi ,  Osamu Yamada

发明人： Fukuji Matsumoto ,  Yoshio Tawara ,  Michio Hayashi ,  Osamu Yamada

IPC分类号： H01L21/31 ,  C23C4/10 ,  C30B31/10 ,  H01L21/22

CPC分类号： C23C4/10 ,  C23C4/11 ,  C30B31/10 ,  Y10S261/75

摘要： An inner tube for use in a semiconductor diffusion furnace is provided comprising a liner or diffusion tube and an insulating layer formed on the entire outer surface of the tube by spraying, typically plasma spraying. The sprayed insulating layer is resistant to deterioration and peeling, ensuring an extended period of service for the tube.

公开(公告)号：US4999228A

公开(公告)日：1991-03-12

申请号：US346736

申请日：1989-05-03

申请人： Fukuji Matsumoto ,  Yoshio Tawara ,  Michio Hayashi

发明人： Fukuji Matsumoto ,  Yoshio Tawara ,  Michio Hayashi

IPC分类号： C04B35/573 ,  C30B31/10

CPC分类号： C30B31/10 ,  C04B35/573 ,  Y10T428/131

摘要： Disclosed is a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide having an iron concentration of 20 ppm or below and a density of 3.0 g/cm.sup.3 or over, and a silicon carbide layer consisting of a high-purity silicon carbide film having an iron concentration of 5 ppm or below deposited on the inner surface of the tube base and a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide, and a silicon carbide layer consisting of a Si-depleted layer formed in the inner wall of the reaction-sintered silicon carbide tube base and a high-purity silicon carbide film deposited on the Si-depleted layer, said silicon carbide film having a thickness of more than 0.5 mm.

公开(公告)号：US5229193A

公开(公告)日：1993-07-20

申请号：US608836

申请日：1990-11-05

申请人： Junji Madono ,  Michio Hayashi ,  Fukuji Matsumoto

发明人： Junji Madono ,  Michio Hayashi ,  Fukuji Matsumoto

IPC分类号： C04B35/565 ,  C04B41/52 ,  C04B41/89 ,  C23C16/32 ,  C23C16/34 ,  H01L21/22 ,  H01L21/477

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C23C16/325 ,  C04B2111/00405 ,  Y10T428/24942 ,  Y10T428/24975

摘要： A silicon carbide member is manufactured by depositing a silicon carbide coating on a substrate of silicon carbide containing free silicon by chemical vapor deposition. By gradually reducing the content of free silicon of the coating such that the coating is made of silicon carbide containing free silicon at the interface with the substrate, but of silicon carbide containing no free silicon at the outer surface, the coating is firmly bonded to the substrate, undergoes little thermal stress and is resistant against cracking and separation upon thermal cycling. The member is suitable for use in the heat treatment of semiconductor elements.

公开(公告)号：US20050016635A1

公开(公告)日：2005-01-27

申请号：US10495452

申请日：2002-11-14

申请人： Takahiro Hashimoto ,  Fukuji Matsumoto ,  Takehisa Minowa

发明人： Takahiro Hashimoto ,  Fukuji Matsumoto ,  Takehisa Minowa

IPC分类号： C04B35/117 ,  C04B35/478 ,  C04B35/505 ,  C22B9/00 ,  C22B59/00 ,  F27B14/10 ,  F27D1/00 ,  C21B7/06

CPC分类号： F27B14/10 ,  B29C33/56 ,  C04B35/117 ,  C04B35/18 ,  C04B35/478 ,  C04B35/505 ,  C04B35/6268 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3234 ,  C04B2235/3244 ,  C04B2235/3418 ,  C04B2235/3463 ,  C04B2235/3804 ,  C04B2235/3813 ,  C04B2235/386 ,  C04B2235/3873 ,  C04B2235/5472 ,  C04B2235/80 ,  C22B9/00 ,  C22B59/00 ,  F27D1/0006

摘要： A crucible comprising Al2O3 and at least one selected from rare earth oxides inclusive of Y2O3 as main components and characterized by firing at 500-1,800° C., the distribution of the rare earth oxide at a higher proportion in a fine particle portion having a particle size of-up to 0.5 mm than in a coarse particle portion having a particle size in excess of 0.5 mm, and the substantial absence of the reaction product of the rare earth oxide with Al2O3 is suitable for the melting of a rare earth alloy.

摘要翻译： 一种包含Al 2 O 3和选自包括Y 2 O 3作为主要成分的稀土氧化物中的至少一种的坩埚，其特征在于在500-1,800℃下烧制，在具有颗粒的细颗粒部分中以较高比例分布稀土氧化物 尺寸大于0.5μm，粒径超过0.5mm的粗颗粒部分，稀土氧化物与Al 2 O 3的反应产物基本上不存在，因此适用于稀土合金的熔融。

公开(公告)号：US07157395B2

公开(公告)日：2007-01-02

申请号：US10495452

申请日：2002-11-14

申请人： Takahiro Hashimoto ,  Fukuji Matsumoto ,  Takehisa Minowa

发明人： Takahiro Hashimoto ,  Fukuji Matsumoto ,  Takehisa Minowa

IPC分类号： C04B35/478 ,  C04B35/50

CPC分类号： F27B14/10 ,  B29C33/56 ,  C04B35/117 ,  C04B35/18 ,  C04B35/478 ,  C04B35/505 ,  C04B35/6268 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3234 ,  C04B2235/3244 ,  C04B2235/3418 ,  C04B2235/3463 ,  C04B2235/3804 ,  C04B2235/3813 ,  C04B2235/386 ,  C04B2235/3873 ,  C04B2235/5472 ,  C04B2235/80 ,  C22B9/00 ,  C22B59/00 ,  F27D1/0006

摘要： A crucible comprising Al2O3 and at least one selected from rare earth oxides inclusive of Y2O3 as main components and characterized by firing at 500–1,800° C., the distribution of the rare earth oxide at a higher proportion in a fine particle portion having a particle size of up to 0.5 mm than in a coarse particle portion having a particle size in excess of 0.5 mm, and the substantial absence of the reaction product of the rare earth oxide with Al2O3 is suitable for the melting of a rare earth alloy.

摘要翻译： 包含Al 2 O 3 3和至少一种选自包括Y 2 O 3 N 3 O 3的稀土氧化物的至少一种的坩埚， 作为主要成分，其特征在于在500-1800℃下烧制，在粒径达0.5mm的细粒部分中稀土氧化物的分布比粒径大于粒径的粗粒子部分分布较多 超过0.5mm，并且稀土氧化物与Al 2 O 3 3 N的反应产物基本上不存在适用于稀土合金的熔化。

公开(公告)号：US20060252629A1

公开(公告)日：2006-11-09

申请号：US11480466

申请日：2006-07-05

申请人： Takahiro Hashimoto ,  Fukuji Matsumoto ,  Takehisa Minowa

发明人： Takahiro Hashimoto ,  Fukuji Matsumoto ,  Takehisa Minowa

IPC分类号： C04B35/505 ,  C04B35/111

CPC分类号： F27B14/10 ,  B29C33/56 ,  C04B35/117 ,  C04B35/18 ,  C04B35/478 ,  C04B35/505 ,  C04B35/6268 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3234 ,  C04B2235/3244 ,  C04B2235/3418 ,  C04B2235/3463 ,  C04B2235/3804 ,  C04B2235/3813 ,  C04B2235/386 ,  C04B2235/3873 ,  C04B2235/5472 ,  C04B2235/80 ,  C22B9/00 ,  C22B59/00 ,  F27D1/0006

摘要： A crucible comprising Al2O3 and at least one selected from rare earth oxides inclusive of Y2O3 as main components and characterized by firing at 500-1,800° C., the distribution of the rare earth oxide at a higher proportion in a fine particle portion having a particle size of up to 0.5 mm than in a coarse particle portion having a particle size in excess of 0.5 mm, and the substantial absence of the reaction product of the rare earth oxide with Al2O3 is suitable for the melting of a rare earth alloy.

摘要翻译： 包含Al 2 O 3 3和至少一种选自包括Y 2 O 3 N 3 O 3的稀土氧化物的至少一种的坩埚， 作为主要成分，其特征在于在500-1800℃下烧制，在粒径达0.5mm的细粒部分中稀土氧化物的分布比粒径大于粒径的粗粒子部分分布较多 超过0.5mm，并且稀土氧化物与Al 2 O 3 3 N的反应产物基本上不存在适用于稀土合金的熔化。