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1.发明授权
公开(公告)号：US5073466A
公开(公告)日：1991-12-17
申请号：US394657
申请日：1989-08-16
申请人： Fuminori Ishikawa , Kunihiro Tamahashi , Shigeharu Onuma , Masatoshi Wakagi , Masanobu Hanazono , Mitsuyoshi Shoji , Takayuki Nakakawaji , Yutaka Ito , Shigeki Komatsuzaki , Yasuo Shimamura , Chiaki Yamagishi
发明人： Fuminori Ishikawa , Kunihiro Tamahashi , Shigeharu Onuma , Masatoshi Wakagi , Masanobu Hanazono , Mitsuyoshi Shoji , Takayuki Nakakawaji , Yutaka Ito , Shigeki Komatsuzaki , Yasuo Shimamura , Chiaki Yamagishi
IPC分类号： G03G5/147
CPC分类号： G03G5/1476 , G03G5/147 , G03G5/14708 , G03G5/14786
摘要： An electrophotographic member comprising a support, a photoconductive layer formed thereon, and a surface layer formed thereon, said surface layer including or attaching a lubricating agent having a perfluoropolyoxyalkyl or perfluoropolyoxyalkylene group to form an organic surface protective lubricating layer, and a fixing group to be fixed to the surface layer, is excellent in moisture resistance, wear resistance and cleaning properties and thus useful in an electrophotographic apparatus with a long life and high reliability.
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2.发明申请CMP POLISHING SLURRY, ADDITIVE LIQUID FOR CMP POLISHING SLURRY, AND SUBSTRATE-POLISHING PROCESSES USING THE SAME 审中-公开CMP抛光浆料，用于CMP抛光浆料的添加剂液体，以及使用其的底物抛光方法公开(公告)号：US20100015806A1
公开(公告)日：2010-01-21
申请号：US12440755
申请日：2007-09-13
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention relates to a CMP polishing slurry containing cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer includes a polymer obtained by polymerizing a monomer including at least one of a carboxylic acid having an unsaturated double bond and a salt thereof, using a reducing inorganic acid salt and oxygen as a redox polymerization initiator; an additive liquid for CMP polishing slurry; and substrate-polishing processes using the same. This makes it possible to polish a silicon oxide film effectively in a CMP technique for planarizing an interlayer dielectric, a BPSG film or a shallow trench isolating insulated film.
摘要翻译： 本发明涉及含有氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中所述水溶性聚合物包括通过聚合包含至少一种具有不饱和羧酸的羧酸的单体获得的聚合物 双键及其盐，使用还原性无机酸盐和氧作为氧化还原聚合引发剂; 用于CMP抛光浆料的添加剂液体; 和使用其的基板抛光工艺。 这使得可以在用于平坦化层间电介质，BPSG膜或浅沟槽隔离绝缘膜的CMP技术中有效地抛光氧化硅膜。
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公开(公告)号：US20060148667A1
公开(公告)日：2006-07-06
申请号：US10544073
申请日：2004-01-30
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： C11D7/50
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物 和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任何一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。
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4.发明申请CMP Abrasive Slurry for Polishing Insulation Film, Polishing Method, and Semiconductor Electronic Part Polished by the Polishing Method 有权用于抛光绝缘膜，抛光方法和抛光方法抛光的半导体电子部件的CMP磨料浆料公开(公告)号：US20090047786A1
公开(公告)日：2009-02-19
申请号：US12162662
申请日：2007-01-31
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention provides a CMP abrasive slurry for polishing insulation film, that allow efficiently and high-speed polishing of insulation films such as SiO2 film and SiOC film in the CMP method of flattening an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or a wiring-insulating film layer, a polishing method by using the abrasive slurry, and a semiconductor electronic part polished by the polishing method. A CMP abrasive slurry for polishing insulation film containing cerium oxide particles, a dispersant, a water-soluble polymer having amino groups on the side chains and water, a polishing method by using the CMP abrasive slurry, and a semiconductor electronic part polished by the polishing method.
摘要翻译： 本发明提供了一种用于抛光绝缘膜的CMP磨料浆料，其在使层压绝缘膜平坦化的CMP方法，BPSG膜，绝缘膜用于在绝缘膜上进行有效地高速抛光，其可以有效地高速地抛光诸如SiO 2膜和SiOC膜的绝缘膜 浅沟槽隔离或布线绝缘膜层，通过使用磨料浆料的抛光方法和通过抛光方法抛光的半导体电子部件。 用于抛光含有氧化铈颗粒的绝缘膜，分散剂，在侧链上具有氨基的水溶性聚合物和水的CMP磨料浆料，使用CMP磨料浆料的抛光方法以及通过抛光抛光的半导体电子部件 方法。
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公开(公告)号：US20080214093A1
公开(公告)日：2008-09-04
申请号：US12149216
申请日：2008-04-29
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物 和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任何一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。
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公开(公告)号：US07838482B2
公开(公告)日：2010-11-23
申请号：US10544073
申请日：2004-01-30
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物 和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。
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7.发明授权CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method 有权用于抛光绝缘膜的CMP磨料浆料，抛光方法和通过抛光方法抛光的半导体电子部件公开(公告)号：US08524111B2
公开(公告)日：2013-09-03
申请号：US12162662
申请日：2007-01-31
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention provides a CMP abrasive slurry for polishing insulation film, that allow efficiently and high-speed polishing of insulation films such as SiO2 film and SiOC film in the CMP method of flattening an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or a wiring-insulating film layer, a polishing method by using the abrasive slurry, and a semiconductor electronic part polished by the polishing method. A CMP abrasive slurry for polishing insulation film containing cerium oxide particles, a dispersant, a water-soluble polymer having amino groups on the side chains and water, a polishing method by using the CMP abrasive slurry, and a semiconductor electronic part polished by the polishing method.
摘要翻译： 本发明提供了一种用于抛光绝缘膜的CMP磨料浆料，其在使层压绝缘膜平坦化的CMP方法，BPSG膜，绝缘膜用于在绝缘膜上进行有效地高速抛光，其可以有效地高速地抛光诸如SiO 2膜和SiOC膜的绝缘膜 浅沟槽隔离或布线绝缘膜层，通过使用磨料浆料的抛光方法和通过抛光方法抛光的半导体电子部件。 用于抛光含有氧化铈颗粒的绝缘膜，分散剂，在侧链上具有氨基的水溶性聚合物和水的CMP磨料浆料，使用CMP磨料浆料的抛光方法以及通过抛光抛光的半导体电子部件 方法。
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公开(公告)号：US20110028073A1
公开(公告)日：2011-02-03
申请号：US12902337
申请日：2010-10-12
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有N-单取代产物和 一种选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物中的任何一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。
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公开(公告)号：US08168541B2
公开(公告)日：2012-05-01
申请号：US12902337
申请日：2010-10-12
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物 和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供一种研磨浆料和抛光方法，其可以有效和快速地对由氧化硅等制成的膜进行抛光，因此在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制该工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。
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公开(公告)号：US07837800B2
公开(公告)日：2010-11-23
申请号：US12149216
申请日：2008-04-29
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物 和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。
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