公开(公告)号：US4563240A

公开(公告)日：1986-01-07

申请号：US636997

申请日：1984-08-02

申请人： Fumio Shibata ,  Katsuaki Nagatomo ,  Hidetomo Fukuhara ,  Gen Marumoto ,  Sadayuki Okudaira

发明人： Fumio Shibata ,  Katsuaki Nagatomo ,  Hidetomo Fukuhara ,  Gen Marumoto ,  Sadayuki Okudaira

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3348

摘要： The invention relates to a method and apparatus for a plasma process in which identical samples are processed in a plasma-processing apparatus provided with a radio-frequency plasma generation means and a microwave plasma generation means, by the utilization of a radio-frequency plasma in the radio-frequency plasma generation means and a microwave plasma in the microwave plasma generation means. The plasma-processing rate can thus be increased, and also electrical damage due to ions in the plasma can be reduced, thereby ensuring a high throughput and a high quality during the manufacture of semiconductor integrated circuit elements.

摘要翻译： 本发明涉及一种等离子体工艺的方法和装置，其中相同的样品在具有射频等离子体产生装置和微波等离子体产生装置的等离子体处理装置中通过利用射频等离子体 射频等离子体产生装置和微波等离子体产生装置中的微波等离子体。 因此可以提高等离子体处理速率，并且还可以降低由于等离子体中的离子造成的电损伤，从而在半导体集成电路元件的制造期间确保高产量和高质量。