公开(公告)号：US4563240A

公开(公告)日：1986-01-07

申请号：US636997

申请日：1984-08-02

申请人： Fumio Shibata ,  Katsuaki Nagatomo ,  Hidetomo Fukuhara ,  Gen Marumoto ,  Sadayuki Okudaira

发明人： Fumio Shibata ,  Katsuaki Nagatomo ,  Hidetomo Fukuhara ,  Gen Marumoto ,  Sadayuki Okudaira

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3348

摘要： The invention relates to a method and apparatus for a plasma process in which identical samples are processed in a plasma-processing apparatus provided with a radio-frequency plasma generation means and a microwave plasma generation means, by the utilization of a radio-frequency plasma in the radio-frequency plasma generation means and a microwave plasma in the microwave plasma generation means. The plasma-processing rate can thus be increased, and also electrical damage due to ions in the plasma can be reduced, thereby ensuring a high throughput and a high quality during the manufacture of semiconductor integrated circuit elements.

摘要翻译： 本发明涉及一种等离子体工艺的方法和装置，其中相同的样品在具有射频等离子体产生装置和微波等离子体产生装置的等离子体处理装置中通过利用射频等离子体 射频等离子体产生装置和微波等离子体产生装置中的微波等离子体。 因此可以提高等离子体处理速率，并且还可以降低由于等离子体中的离子造成的电损伤，从而在半导体集成电路元件的制造期间确保高产量和高质量。

公开(公告)号：US4615761A

公开(公告)日：1986-10-07

申请号：US712032

申请日：1985-03-15

申请人： Keiji Tada ,  Takashi Fujii ,  Gen Marumoto ,  Kazuhiro Jyouo ,  Takahiro Fujisawa

发明人： Keiji Tada ,  Takashi Fujii ,  Gen Marumoto ,  Kazuhiro Jyouo ,  Takahiro Fujisawa

IPC分类号： G01N21/62 ,  H01J37/32 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01J37/32935 ,  G01N21/62 ,  G01N2201/122

摘要： The present invention relates to a method of and apparatus for detecting the end point of plasma treatment. The method includes steps: selecting a plasma spectrum having a characteristic wavelength from the plasma spectrum occurring at the time of the plasma treatment reaction of a specimen; computing a secondary differential value of a function of the quantity of the plasma spectrum selected and the plasma treatment reaction time of the specimen; and detecting the end point of the plasma treatment reaction of the specimen by comparing the secondary differential value computed with preset reference values for judgment. The apparatus comprises a means of selecting plasma spectrum having a particular wavelength from the plasma spectrum occurring at the time of the plasma treatment reaction of the specimen, a means of converting the quantity of the plasma spectrum selected into an analog electric signal, a means of converting the analog electric signal into a value of digital data, a means of counting the plasma treatment reaction time of the specimen, a means of secondarily differentiating a function of the value of digital data and the plasma treatment reaction time, a means of making judgment by comparing the secondary differential value with preset reference values for judgment, and a means of giving an instruction for starting judgment to said means. Thus, accurate detection is achieved regardless of which curve is taken by the change in the reaction time of the quantity of plasma spectrum.

摘要翻译： 本发明涉及一种用于检测等离子体处理终点的方法和装置。 该方法包括以下步骤：从样品的等离子体处理反应时发生的等离子体光谱中选择具有特征波长的等离子体光谱; 计算所选择的等离子体光谱的量和样品的等离子体处理反应时间的函数的二次微分值; 并通过比较用预先设定的基准值进行判断的二次微分值，来检测试样的等离子体处理反应的终点。 该装置包括从样品的等离子体处理反应时出现的等离子体光谱中选择具有特定波长的等离子体光谱的方法，将所选择的等离子体光谱的量转换为模拟电信号的装置， 将模拟电信号转换为数字数据的值，对样本的等离子体处理反应时间进行计数的方法，二次区分数字数据的值和等离子体处理反应时间的功能的手段，进行判断的手段 通过将二次微分值与用于判断的预设参考值进行比较，以及向所述装置发出开始判断的指令的装置。 因此，无论通过等离子体光谱量的反应时间的变化采取哪个曲线，都能实现准确的检测。

公开(公告)号：US5118378A

公开(公告)日：1992-06-02

申请号：US751677

申请日：1991-08-23

申请人： Tatsuo Moroi ,  Keiji Tada ,  Noriaki Yamamoto ,  Tetsunori Kaji ,  Gen Marumoto ,  Yuzou Ohhirabaru

发明人： Tatsuo Moroi ,  Keiji Tada ,  Noriaki Yamamoto ,  Tetsunori Kaji ,  Gen Marumoto ,  Yuzou Ohhirabaru

IPC分类号： H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/32963

摘要： A method of detecting an end point of etching by emission spectroscopy. Using a constant ratio between emission intensities in the course of etching and after the termination thereof, a correction value is computed with data of a waveform already adjusted to be capable of detecting an end point of etching and the corresponding emission intensity in the course of etching treatment thereafter, and the waveform of corresponding emission intensity in the course of etching treatment is processed so that the detection can be conducted on the same level as in the end point detection already adjusted to be capable of detecting the end point of etching at the time of treatment. Thus, irrespective of the reduction of the quantity of emission for an emission detection at each time of treatment, a constant electric signal of the same detecting level can be obtained, making it possible to detect an end point of etching with the same accuracy as in the initial treatment.

摘要翻译： 通过发射光谱法检测蚀刻终点的方法。 在蚀刻过程中和在其终止之后使用发射强度之间的恒定比率，通过已经调节为能够检测蚀刻终点的蚀刻波形和蚀刻过程中的相应发射强度的数据来计算校正值 然后进行处理，并且处理在蚀刻处理过程中相应的发射强度的波形，使得可以在与已经调节为能够检测该刻蚀终点的终点检测相同的水平上进行检测 的治疗。 因此，不管每次处理时发射检测的发射量是否减少，都可以获得相同检测电平的恒定电信号，使得可以以与以下相同的精度来检测蚀刻终点 初步治疗。