Tunable Radio Frequency Low Noise Amplifier
    1.
    发明申请
    Tunable Radio Frequency Low Noise Amplifier 有权
    可调谐射频低噪声放大器

    公开(公告)号:US20150038093A1

    公开(公告)日:2015-02-05

    申请号:US13955514

    申请日:2013-07-31

    Abstract: An apparatus comprising an amplifier comprising an input, a capacitor having a capacitor first side and a capacitor second side, wherein the capacitor first side is coupled to the input, a switch having a switch first side and a switch second side, wherein the switch first side is coupled to the capacitor second side, and a transistor having a transistor gate, and a transistor source, wherein the transistor gate is coupled to the input and the capacitor first side, wherein the transistor source is coupled to the switch second side and wherein the switch is positioned directly between the capacitor second side and the transistor source.

    Abstract translation: 一种包括放大器的装置,包括输入端,具有电容器第一侧的电容器和电容器第二侧,其中所述电容器第一侧耦合到所述输入端,具有开关第一侧和开关第二侧的开关, 一侧耦合到电容器第二侧,以及具有晶体管栅极和晶体管源的晶体管,其中晶体管栅极耦合到输入端和电容器第一侧,其中晶体管源耦合到开关第二侧,其中 开关直接位于电容器第二侧和晶体管源之间。

    Tunable radio frequency low noise amplifier
    6.
    发明授权
    Tunable radio frequency low noise amplifier 有权
    可调谐射频低噪声放大器

    公开(公告)号:US09319009B2

    公开(公告)日:2016-04-19

    申请号:US13955514

    申请日:2013-07-31

    Abstract: An apparatus comprising an amplifier comprising an input, a capacitor having a capacitor first side and a capacitor second side, wherein the capacitor first side is coupled to the input, a switch having a switch first side and a switch second side, wherein the switch first side is coupled to the capacitor second side, and a transistor having a transistor gate, and a transistor source, wherein the transistor gate is coupled to the input and the capacitor first side, wherein the transistor source is coupled to the switch second side and wherein the switch is positioned directly between the capacitor second side and the transistor source.

    Abstract translation: 一种包括放大器的装置,包括输入端,具有电容器第一侧的电容器和电容器第二侧,其中所述电容器第一侧耦合到所述输入端,具有开关第一侧和开关第二侧的开关, 一侧耦合到电容器第二侧,以及具有晶体管栅极和晶体管源的晶体管,其中晶体管栅极耦合到输入端和电容器第一侧,其中晶体管源耦合到开关第二侧,其中 开关直接位于电容器第二侧和晶体管源之间。

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