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公开(公告)号：US3786264A
公开(公告)日：1974-01-15
申请号：US3786264D
申请日：1973-01-02
Applicant: GEN ELECTRIC
IPC: H01L27/144 , H03K17/79 , H01J39/12
CPC classification number: H01L27/1443 , H03K17/79 , Y10T307/773
Abstract: A light detector amplifier preferably fabricated as a monolithic integrated circuit has high speed of response (in the order of 1 microsecond) at low and high illumination levels, uses low quiescent power and supply voltage, and has an optional thyristor or power transistor output. A transistor preamplifier conducts in the quiescent state and reverse biases a photodiode. Upon illumination, current is diverted to the photodiode and a power amplifier is energized to produce an output which can also provide gating current for a thyristor output. Enhanced performance is obtained by the use of special components, and unique placement of components within the circuit. Voltage excursions are limited in the circuit at several points by current steering, pre-biasing and diode clamping techniques.
Abstract translation: 优选地制造为单片集成电路的光检测放大器在低和高照明水平下具有高响应速度（大约1微秒），使用低静态功率和电源电压，并且具有可选的晶闸管或功率晶体管输出。 晶体管前置放大器处于静态状态，反向偏置光电二极管。 在照明时，电流被转移到光电二极管并且功率放大器通电以产生也可以为晶闸管输出提供门控电流的输出。 通过使用特殊组件，以及电路内元件的独特放置可以获得更强的性能。 通过电流转向，预偏置和二极管钳位技术，电压偏移在几个点处受到限制。
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公开(公告)号：US3812518A
公开(公告)日：1974-05-21
申请号：US32058373
申请日：1973-01-02
Applicant: GEN ELECTRIC
Abstract: A monolithic or discrete photodiode has a patterned region, preferably in the form of elongated strips or fingers, with a spacing less than the diffusion length to obtain low capacitance without loss of photo response. Enhanced efficiency is achieved by the use of surface skin regions and/or a buried layer to confine generated carriers, and by a structure that effects combination of the epitaxial layer-substrate photodiode with the finger photodiode. The low capacitance photodiode is sensitive to visible and infrared light and is useful in high speed circuit applications.
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