公开(公告)号：US20160307997A1

公开(公告)日：2016-10-20

申请号：US15194774

申请日：2016-06-28

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Stephen Daley Arthur ,  Alexander Viktorovich Bolotnikov ,  Peter Almern Losee ,  Kevin Sean Motocha ,  Richard Joseph Saia ,  Zachary Matthew Stum ,  Ljuibisa Dragolijub Stevanovic ,  Kuna Venkat Satya Rama Kishore ,  James William Kretchmer

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/861 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36 ,  H01L21/04

CPC classification number: H01L29/0638 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/8613

Abstract: A semiconductor device may include a substrate comprising silicon carbide; a drift layer disposed over the substrate doped with a first dopant type; an anode region disposed adjacent to the drift layer, wherein the anode region is doped with a second dopant type; and a junction termination extension disposed adjacent to the anode region and extending around the anode region, wherein the junction termination extension has a width and comprises a plurality of discrete regions separated in a first direction and in a second direction and doped with varying concentrations with the second dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from an edge of the primary blocking junction.

Abstract translation: 半导体器件可以包括包含碳化硅的衬底; 设置在掺杂有第一掺杂剂类型的衬底上的漂移层; 邻近所述漂移层设置的阳极区域，其中所述阳极区域掺杂有第二掺杂剂类型; 以及连接终端延伸部，其邻近所述阳极区域设置并且围绕所述阳极区域延伸，其中所述连接终端延伸部具有宽度并且包括在第一方向和第二方向上分离的多个离散区域，并且以 第二掺杂剂类型，以便具有通常沿着远离主阻塞结的边缘的方向减小的功能形式的第二导电类型的有效掺杂分布。