公开(公告)号：US20150021695A1

公开(公告)日：2015-01-22

申请号：US13944048

申请日：2013-07-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhenyu Hu ,  Richard J. Carter ,  Andy Wei ,  Qi Zhang ,  Sruthi Muralidharan ,  Amy L. Child

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/7848 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/24 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

Abstract translation: 提供了在半导体器件（例如，鳍式场效应晶体管器件）的外延连接区域中实现均匀外延（epi）生长的方法。 具体地说，提供了一种半导体器件，包括形成在衬底上的伪栅极和一组鳍状场效应晶体管（FinFET）; 形成在所述伪栅极和所述一组FinFET中的每一个上的间隔层; 以及形成在衬底中的一组凹部内的外延材料，该组凹陷在去除伪栅极之前的外延阻挡层之前形成。

公开(公告)号：US10236343B2

公开(公告)日：2019-03-19

申请号：US15848591

申请日：2017-12-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Dina H. Triyoso ,  Timothy J. McArdle ,  Judson R. Holt ,  Amy L. Child ,  George R. Mulfinger

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/762 ,  H01L29/66 ,  H01L29/786

Abstract: A pFET includes a semiconductor-on-insulator (SOI) substrate; and a trench isolation within the SOI substrate, the trench isolation including a raised portion extending above an upper surface of the SOI substrate. A compressive channel silicon germanium (cSiGe) layer is over the SOI substrate. A strain retention member is positioned between at least a portion of the raised portion of the trench isolation and the compressive cSiGe layer. A gate and source/drain regions are positioned over the compressive cSiGe layer.

公开(公告)号：US09508850B2

公开(公告)日：2016-11-29

申请号：US15012760

申请日：2016-02-01

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhenyu Hu ,  Richard J. Carter ,  Andy Wei ,  Qi Zhang ,  Sruthi Muralidharan ,  Amy L. Child

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/24

CPC classification number: H01L29/7848 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/24 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

公开(公告)号：US20160163862A1

公开(公告)日：2016-06-09

申请号：US15012760

申请日：2016-02-01

Applicant: GLOBALFOUNDRIES INC.

Inventor： ZHENYU HU ,  Richard J. Carter ,  Andy Wei ,  Qi Zhang ,  Sruthi Muralidharan ,  Amy L. Child

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/161 ,  H01L29/24 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/7848 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/24 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

公开(公告)号：US20180190768A1

公开(公告)日：2018-07-05

申请号：US15848591

申请日：2017-12-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Dina H. Triyoso ,  Timothy J. McArdle ,  Judson R. Holt ,  Amy L. Child ,  George R. Mulfinger

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/7624 ,  H01L21/76264 ,  H01L29/66477 ,  H01L29/66628 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/78684

Abstract: A pFET includes a semiconductor-on-insulator (SOI) substrate; and a trench isolation within the SOI substrate, the trench isolation including a raised portion extending above an upper surface of the SOI substrate. A compressive channel silicon germanium (cSiGe) layer is over the SOI substrate. A strain retention member is positioned between at least a portion of the raised portion of the trench isolation and the compressive cSiGe layer. A gate and source/drain regions are positioned over the compressive cSiGe layer.

公开(公告)号：US09293586B2

公开(公告)日：2016-03-22

申请号：US13944048

申请日：2013-07-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhenyu Hu ,  Richard J. Carter ,  Andy Wei ,  Qi Zhang ,  Sruthi Muralidharan ,  Amy L. Child

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7848 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/24 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

Abstract translation: 提供了在半导体器件（例如，鳍式场效应晶体管器件）的外延连接区域中实现均匀外延（epi）生长的方法。 具体地说，提供了一种半导体器件，包括形成在衬底上的伪栅极和一组鳍状场效应晶体管（FinFET）; 形成在所述伪栅极和所述一组FinFET中的每一个上的间隔层; 以及形成在衬底中的一组凹部内的外延材料，该组凹陷在去除伪栅极之前的外延阻挡层之前形成。