公开(公告)号：US20180182708A1

公开(公告)日：2018-06-28

申请号：US15388530

申请日：2016-12-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat AHMED ,  Benjamin G. MOSER ,  Vimal Kumar KAMINENI ,  Dinesh KOLI ,  Vishal CHHABRA

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/265 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/522

CPC classification number: H01L23/53209 ,  H01L21/265 ,  H01L21/321 ,  H01L21/32139 ,  H01L21/76807 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.