公开(公告)号：US20180130891A1

公开(公告)日：2018-05-10

申请号：US15348356

申请日：2016-11-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ja-Hyung HAN ,  Xingzhao SHI ,  Dinesh KOLI

IPC: H01L29/423 ,  H01L29/40 ,  H01L21/3105

CPC classification number: H01L29/4238 ,  H01L21/823437 ,  H01L29/401 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/51

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to gate structures with minimized gate thickness loss and methods of manufacture. The structure includes: a plurality of gate structures; a film layer provided over the gate structures and adjacent to the gate structures; and a planarized cap layer on the film and over the plurality of gate structures, the planarized cap layer having a different selectivity to slurry of a chemical mechanical polishing (CMP) process than the film.

公开(公告)号：US20180182708A1

公开(公告)日：2018-06-28

申请号：US15388530

申请日：2016-12-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat AHMED ,  Benjamin G. MOSER ,  Vimal Kumar KAMINENI ,  Dinesh KOLI ,  Vishal CHHABRA

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/265 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/522

CPC classification number: H01L23/53209 ,  H01L21/265 ,  H01L21/321 ,  H01L21/32139 ,  H01L21/76807 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.

公开(公告)号：US20170053794A1

公开(公告)日：2017-02-23

申请号：US14832246

申请日：2015-08-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hong Jin KIM ,  Liqiao QIN ,  Sumeet KASHYAP ,  Dinesh KOLI ,  Andrew KRANICK ,  Tae Hoon LEE ,  Hyucksoo YANG ,  Jason MAZZOTTI

IPC: H01L21/02 ,  H01L21/66 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/67253 ,  H01L21/02052 ,  H01L21/67046 ,  H01L21/67051 ,  H01L22/12 ,  H01L22/26

Abstract: A method and apparatus are provided for automatically controlling the position of the spray bars and nozzles and the spray flow of a CMP in-situ cleaning module. Embodiments include fixing a wafer to a CMP cleaning module, the cleaning module having a first and a second group of spray bars and nozzles, the first and second groups of spray bars and nozzles being located proximate to opposite surfaces of the wafer; cleaning one or more of the surfaces of the wafer with a chemical spray forced through at least one of the groups of spray bars and nozzles; determining a measured profile of the one or more surfaces of the wafer; comparing the measured profile against a target profile; and adjusting automatically at least one of the first and second groups of spray bars and nozzles relative to the one or more surfaces of the wafer based on the comparison.

Abstract translation: 提供了一种用于自动控制喷杆和喷嘴的位置以及CMP原位清洁模块的喷射流的方法和装置。 实施例包括将晶片固定到CMP清洁模块，清洁模块具有第一组和第二组喷杆和喷嘴，第一组和第二组喷杆和喷嘴位于晶片相对表面附近; 用强制通过喷雾棒和喷嘴组中的至少一个的化学喷雾清洁晶片的一个或多个表面; 确定所述晶片的所述一个或多个表面的测量轮廓; 将测量的轮廓与目标轮廓进行比较; 并且基于所述比较，相对于所述晶片的所述一个或多个表面自动调整所述第一组和第二组喷杆和喷嘴中的至少一个。