公开(公告)号：US20180277427A1

公开(公告)日：2018-09-27

申请号：US15988145

申请日：2018-05-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Viraj SARDESAI ,  Suraj K. PATIL ,  Scott BEASOR ,  Vimal Kumar KAMINENI

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76849 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/5226 ,  H01L23/53209

Abstract: A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation.

公开(公告)号：US20180182708A1

公开(公告)日：2018-06-28

申请号：US15388530

申请日：2016-12-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat AHMED ,  Benjamin G. MOSER ,  Vimal Kumar KAMINENI ,  Dinesh KOLI ,  Vishal CHHABRA

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/265 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/522

CPC classification number: H01L23/53209 ,  H01L21/265 ,  H01L21/321 ,  H01L21/32139 ,  H01L21/76807 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.

公开(公告)号：US20180130703A1

公开(公告)日：2018-05-10

申请号：US15347119

申请日：2016-11-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Viraj SARDESAI ,  Suraj K. PATIL ,  Scott BEASOR ,  Vimal Kumar KAMINENI

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76849 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53209

Abstract: A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation.