公开(公告)号：US20170278720A1

公开(公告)日：2017-09-28

申请号：US15077480

申请日：2016-03-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jason Eugene STEPHENS ,  Guillaume BOUCHE ,  Byoung Youp KIM ,  Craig Michael CHILD, JR.

IPC: H01L21/3213

CPC classification number: H01L21/32 ,  H01L21/0337 ,  H01L21/31144

Abstract: A method for forming a pattern for interconnection lines and associated continuity dielectric blocks in an integrated circuit includes providing a structure having a mandrel layer disposed over an etch mask layer, the etch mask layer being disposed over a pattern layer and the pattern layer being disposed over a dielectric stack. Patterning an array of mandrels in the mandrel layer. Selectively etching a beta trench entirely in a mandrel of the array, the beta trench overlaying a beta block mask portion of the pattern layer. Selectively etching a gamma trench entirely in the etch mask layer, the gamma trench overlaying a gamma block mask portion of the pattern layer. Selectively etching the structure to form a pattern in the pattern layer, the pattern including the gamma and beta block mask portions.

公开(公告)号：US20180233404A1

公开(公告)日：2018-08-16

申请号：US15430039

申请日：2017-02-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jiehui SHU ,  Byoung Youp KIM ,  Jinping LIU

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76825 ,  H01L21/76802 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to variable space mandrel cut for self-aligned double patterning and methods of manufacture. The method includes: forming a plurality of mandrels on a substrate; forming spacers about the plurality of mandrels and exposed portions of the substrate; removing a portion of at least one of the plurality of mandrels to form an opening; and filling in the opening with material.