公开(公告)号：US09406888B2

公开(公告)日：2016-08-02

申请号：US13960877

申请日：2013-08-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lawrence A. Clevenger ,  Chandrasekhar Narayan ,  Gregory Allen Northrop ,  Carl John Radens ,  Brian Christopher Sapp

IPC: H01L21/20 ,  H01L21/36 ,  H01L51/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01L51/05 ,  H01L29/775 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775 ,  H01L51/0012 ,  H01L51/0541 ,  Y10S977/742 ,  Y10S977/842

Abstract: Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.

Abstract translation: 本发明的实施例提供一种形成碳纳米管的半导体器件的方法。 该方法包括在用于形成装置的基板中产生引导结构; 将多个碳纳米管分散在所述引导结构内，所述多个碳纳米管具有由所述引导结构确定的取向; 将多个碳纳米管固定到引导结构; 以及将一个或多个触点形成到所述装置。 还提供了形成的碳纳米管装置的结构。