公开(公告)号：US09257639B2

公开(公告)日：2016-02-09

申请号：US14296570

申请日：2014-06-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： SangBum Kim ,  Daniel Krebs ,  Chung Hon Lam ,  Charalampos Pozidis

IPC: G11C11/16 ,  H01L45/00 ,  G11C13/00 ,  G11C11/56

CPC classification number: H01L45/06 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/15 ,  G11C2213/52 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/144

Abstract: Improved phase-change memory cells are provided for storing information in a plurality of programmable cell states. A phase-change material is located between first and second electrodes for applying a read voltage to the phase-change material to read the programmed cell state. An electrically-conductive component extends from one electrode to the other in contact with the phase-change material. The resistance presented by this component to a cell current produced by the read voltage is less than that of the amorphous phase and greater than that of the crystalline phase of the phase-change material in any of the cell states.

Abstract translation: 改进的相变存储器单元被提供用于存储多个可编程单元状态的信息。 相变材料位于第一和第二电极之间，用于向相变材料施加读取电压以读取编程的单元状态。 导电部件从相对于相变材料接触的一个电极延伸到另一个电极。 由该组分对由读取电压产生的电池电流的电阻小于非晶相的电阻，并且大于在任何电池状态下相变材料的晶相的电阻。