公开(公告)号：US20180108571A1

公开(公告)日：2018-04-19

申请号：US15294228

申请日：2016-10-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： David C. Pritchard ,  Tuhin Guha Neogi ,  Scott Luning ,  David Doman

IPC: H01L21/8234 ,  H01L21/768 ,  H01L21/321 ,  H01L21/311 ,  H01L21/027 ,  H01L23/528 ,  H01L23/522 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L21/823475 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/823418 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/14636 ,  H01L29/0847 ,  H01L29/66568

Abstract: At least one method, apparatus and system disclosed involves providing an integrated circuit having metal feature flyover over an middle-of-line (MOL) feature. A first location for a non-contact intersection region between a first middle of line (MOL) interconnect feature and a metal feature in a functional cell is determined. A dielectric feature is formed over the first MOL interconnect feature at the first location. The metal feature is formed over the dielectric layer, the dielectric layer providing a predetermined amount of voltage isolation between the first MOL interconnect feature and the metal feature.

公开(公告)号：US20220085994A1

公开(公告)日：2022-03-17

申请号：US17020895

申请日：2020-09-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Romain H. A. Feuillette ,  David C. Pritchard ,  Bernhard J. Wunder ,  Elizabeth Strehlow

IPC: H04L9/08 ,  H04L9/32

Abstract: Methods and systems generate seeds for public-private key pairs by determining a timestamp value associated with a process design kit (PDK) when a user of the PDK triggers a tool of the PDK while designing an integrated circuit device to have a physical unclonable function device (PUF). The methods and systems generate a first value by mapping the timestamp value to data of the user, generate a second value by mapping the timestamp value to configuration data of the PDK, and generate a third value by mapping the timestamp value to layout data of the PDK. A random number is then generated by applying a function to the first value, the second value, and the third value. A public-private encryption key pair is generated using the random number as a first seed number and using a second number generated by the number generation device as a second seed number.

公开(公告)号：US20180182674A1

公开(公告)日：2018-06-28

申请号：US15905621

申请日：2018-02-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： David C. Pritchard ,  Tuhin Guha Neogi ,  Scott Luning ,  David Doman

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/08 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/027 ,  H01L21/321 ,  H01L21/311

CPC classification number: H01L21/823475 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/823418 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/14636 ,  H01L29/0847 ,  H01L29/66568

Abstract: At least one method, apparatus and system disclosed involves providing an integrated circuit having metal feature flyover over an middle-of-line (MOL) feature. A first location for a non-contact intersection region between a first middle of line (MOL) interconnect feature and a metal feature in a functional cell is determined. A dielectric feature is formed over the first MOL interconnect feature at the first location. The metal feature is formed over the dielectric layer, the dielectric layer providing a predetermined amount of voltage isolation between the first MOL interconnect feature and the metal feature.

公开(公告)号：US09947590B1

公开(公告)日：2018-04-17

申请号：US15294228

申请日：2016-10-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： David C. Pritchard ,  Tuhin Guha Neogi ,  Scott Luning ,  David Doman

IPC: H01L21/00 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/321 ,  H01L21/311 ,  H01L21/027 ,  H01L23/528 ,  H01L23/522 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L21/823475 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/823418 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/14636 ,  H01L29/0847 ,  H01L29/66568

Abstract: At least one method, apparatus and system disclosed involves providing an integrated circuit having metal feature flyover over an middle-of-line (MOL) feature. A first location for a non-contact intersection region between a first middle of line (MOL) interconnect feature and a metal feature in a functional cell is determined. A dielectric feature is formed over the first MOL interconnect feature at the first location. The metal feature is formed over the dielectric layer, the dielectric layer providing a predetermined amount of voltage isolation between the first MOL interconnect feature and the metal feature.

公开(公告)号：US10691862B2

公开(公告)日：2020-06-23

申请号：US15644288

申请日：2017-07-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Neha Nayyar ,  Daniel J. Dechene ,  David C. Pritchard ,  George J. Kluth

IPC: G06F30/394 ,  H01L23/522 ,  H01L21/8234

Abstract: The present disclosure relates to methodologies for designing semiconductor structures, and, more particularly, creating a methodology to connect contacts of semiconductor elements to a metal line using marker tabs to reserve space for future connections between the contacts and the metal line, and then reassigning the marker tabs to connections between the contacts and the metal line on different levels of a metal stack formed over the semiconductor elements.

公开(公告)号：US10068806B2

公开(公告)日：2018-09-04

申请号：US15905621

申请日：2018-02-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： David C. Pritchard ,  Tuhin Guha Neogi ,  Scott Luning ,  David Doman

IPC: H01L21/8234 ,  H01L29/08 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311 ,  H01L21/321 ,  H01L27/146

CPC classification number: H01L21/823475 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/823418 ,  H01L23/522 ,  H01L23/5221 ,  H01L23/5222 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/14636 ,  H01L29/0847 ,  H01L29/66568

Abstract: At least one method, apparatus and system disclosed involves providing an integrated circuit having metal feature flyover over an middle-of-line (MOL) feature. A first location for a non-contact intersection region between a first middle of line (MOL) interconnect feature and a metal feature in a functional cell is determined. A dielectric feature is formed over the first MOL interconnect feature at the first location. The metal feature is formed over the dielectric layer, the dielectric layer providing a predetermined amount of voltage isolation between the first MOL interconnect feature and the metal feature.