公开(公告)号：US09910348B2

公开(公告)日：2018-03-06

申请号：US14788296

申请日：2015-06-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Geng Han ,  Scott M. Mansfield ,  Dominique Nguyen-Ngoc ,  Donald J. Samuels ,  Ramya Viswanathan

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  H01L21/027

CPC classification number: G03F1/36 ,  G03F1/144 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01L21/0274

Abstract: A method of mask correction where two independent process models are analyzed and co-optimized simultaneously. In the method, a first lithographic process model simulation is run on a computer system that results in generating a first mask size in a first process window. Simultaneously, a second hard mask open etch process model simulation is run resulting in generating a second mask size in a second process window. Each first lithographic process model and second hard mask open etch process model simulations are analyzed in a single iterative loop and a common process window (PW) optimized between lithography and etch is obtained such that said first mask size and second mask size are centered between said common PW. Further, an etch model form is generated that accounts for differences in an etched pattern due to variation in three-dimensional photoresist profile, the model form including both optical and density terms that directly relate to an optical image.

公开(公告)号：US20170004233A1

公开(公告)日：2017-01-05

申请号：US14788296

申请日：2015-06-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Geng Han ,  Scott M. Mansfield ,  Dominique Nguyen-Ngoc ,  Donald J. Samuels ,  Ramya Viswanathan

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G03F1/36 ,  G03F1/144 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01L21/0274

Abstract: A method of mask correction where two independent process models are analyzed and co-optimized simultaneously. In the method, a first lithographic process model simulation is run on a computer system that results in generating a first mask size in a first process window. Simultaneously, a second hard mask open etch process model simulation is run resulting in generating a second mask size in a second process window. Each first lithographic process model and second hard mask open etch process model simulations are analyzed in a single iterative loop and a common process window (PW) optimized between lithography and etch is obtained such that said first mask size and second mask size are centered between said common PW. Further, an etch model form is generated that accounts for differences in an etched pattern due to variation in three-dimensional photoresist profile, the model form including both optical and density terms that directly relate to an optical image.

Abstract translation: 一种掩模校正方法，其中两个独立的过程模型被同时分析和共同优化。 在该方法中，在计算机系统上运行第一光刻过程模型模拟，其导致在第一处理窗口中产生第一掩模尺寸。 同时，运行第二硬掩模开放蚀刻工艺模型模拟，导致在第二处理窗口中产生第二掩模尺寸。 在单个迭代循环中分析每个第一光刻处理模型和第二硬掩模开放蚀刻工艺模拟模拟，并且获得在光刻和蚀刻之间优化的公共工艺窗口（PW），使得所述第一掩模尺寸和第二掩模尺寸在所述 普通PW。 此外，产生蚀刻模型形式，其考虑由于三维光致抗蚀剂轮廓的变化而导致的蚀刻图案的差异，该模型形式包括与光学图像直接相关的光学和密度项。