中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.013 seconds)

    Predicting process fail limits
    1.
    发明授权
    Predicting process fail limits 有权
    预测过程失败限制

    公开(公告)号：US09471743B1

    公开(公告)日：2016-10-18

    申请号：US14674571

    申请日：2015-03-31

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Geng Han ,  Scott M. Mansfield ,  Ramya Viswanathan

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G06F17/5036 ,  G06F2217/12 ,  Y02P90/265

    Abstract: In an approach for predicting a process fail limit for a semiconductor manufacturing process, a computer determines a potential working process condition for each of a plurality of process parameters varied in forming a test wafer feature. The computer determines a process sigma value for each of the plurality of process parameters in forming the test wafer feature and a measurement sigma value. The computer evaluates a set of measurements of the test wafer feature compared to an acceptable wafer feature dimension, where each measurement of the set of measurements is a pass or fail as compared to the acceptable wafer feature dimension. The computer determines whether one or more fails are evaluated compared to the acceptable wafer feature dimension. The computer produces a predicted process fail limit based, at least in part, on the evaluation of fails, the measurement sigma value, and a desired target sigma value.

    Abstract translation: 在用于预测半导体制造工艺的工艺故障限制的方法中，计算机确定在形成测试晶片特征时变化的多个工艺参数中的每一个的潜在工作工艺条件。 在形成测试晶片特征和测量西格玛值时，计算机确定多个工艺参数中的每个工艺参数的工艺sigma值。 与可接受的晶片特征尺寸相比，计算机评估测试晶片特征的一组测量，其中与可接受的晶片特征尺寸相比，该组测量的每个测量是通过或失败。 与可接受的晶片特征尺寸相比，计算机确定是否评估一个或多个故障。 该计算机至少部分地基于失败的评估，测量西格玛值和期望的目标σ值产生预测的过程失败限制。

    METHOD OF SIMULTANEOUS LITHOGRAPHY AND ETCH CORRECTION FLOW
    2.
    发明申请
    METHOD OF SIMULTANEOUS LITHOGRAPHY AND ETCH CORRECTION FLOW 有权
    同时计算和蚀刻校正流程的方法

    公开(公告)号：US20170004233A1

    公开(公告)日：2017-01-05

    申请号：US14788296

    申请日：2015-06-30

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Geng Han ,  Scott M. Mansfield ,  Dominique Nguyen-Ngoc ,  Donald J. Samuels ,  Ramya Viswanathan

    IPC: G06F17/50 ,  G03F1/36

    CPC classification number: G03F1/36 ,  G03F1/144 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01L21/0274

    Abstract: A method of mask correction where two independent process models are analyzed and co-optimized simultaneously. In the method, a first lithographic process model simulation is run on a computer system that results in generating a first mask size in a first process window. Simultaneously, a second hard mask open etch process model simulation is run resulting in generating a second mask size in a second process window. Each first lithographic process model and second hard mask open etch process model simulations are analyzed in a single iterative loop and a common process window (PW) optimized between lithography and etch is obtained such that said first mask size and second mask size are centered between said common PW. Further, an etch model form is generated that accounts for differences in an etched pattern due to variation in three-dimensional photoresist profile, the model form including both optical and density terms that directly relate to an optical image.

    Abstract translation: 一种掩模校正方法，其中两个独立的过程模型被同时分析和共同优化。 在该方法中，在计算机系统上运行第一光刻过程模型模拟，其导致在第一处理窗口中产生第一掩模尺寸。 同时，运行第二硬掩模开放蚀刻工艺模型模拟，导致在第二处理窗口中产生第二掩模尺寸。 在单个迭代循环中分析每个第一光刻处理模型和第二硬掩模开放蚀刻工艺模拟模拟，并且获得在光刻和蚀刻之间优化的公共工艺窗口（PW），使得所述第一掩模尺寸和第二掩模尺寸在所述 普通PW。 此外，产生蚀刻模型形式，其考虑由于三维光致抗蚀剂轮廓的变化而导致的蚀刻图案的差异，该模型形式包括与光学图像直接相关的光学和密度项。

    Unifying realtime and static data for presenting over a web service
    3.
    发明授权
    Unifying realtime and static data for presenting over a web service 有权

    公开(公告)号：US10516767B2

    公开(公告)日：2019-12-24

    申请号：US15131174

    申请日：2016-04-18

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Amith Singhee ,  Steven Hirsch ,  Ashok Pon Kumar Sree Prakash ,  Ulrich A. Finkler ,  David O. Melville ,  Scott M. Mansfield

    IPC: G06F15/173 ,  H04L29/06 ,  H04L29/08

    Abstract: A method of presenting data over a Web service interface includes: establishing, by a first computer process, a persistent transmission control protocol (TCP) network connection between the first computer process and a second computer process; dynamically allocating, by the second computer process, memory in response to receipt of static data over the persistent TCP network connection from the first computer process; updating, by the second computer process, the memory in response to receipt of dynamic data received over the persistent TCP network connection from the first computer process; and enabling, by the second computer process, a Web server to access the updated data for presentation by the Web service interface. The static data identifies a given entity and the dynamic data includes metric data provided for the entity.

    Method of simultaneous lithography and etch correction flow
    4.
    发明授权
    Method of simultaneous lithography and etch correction flow 有权

    公开(公告)号：US09910348B2

    公开(公告)日：2018-03-06

    申请号：US14788296

    申请日：2015-06-30

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Geng Han ,  Scott M. Mansfield ,  Dominique Nguyen-Ngoc ,  Donald J. Samuels ,  Ramya Viswanathan

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  H01L21/027

    CPC classification number: G03F1/36 ,  G03F1/144 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01L21/0274

    Abstract: A method of mask correction where two independent process models are analyzed and co-optimized simultaneously. In the method, a first lithographic process model simulation is run on a computer system that results in generating a first mask size in a first process window. Simultaneously, a second hard mask open etch process model simulation is run resulting in generating a second mask size in a second process window. Each first lithographic process model and second hard mask open etch process model simulations are analyzed in a single iterative loop and a common process window (PW) optimized between lithography and etch is obtained such that said first mask size and second mask size are centered between said common PW. Further, an etch model form is generated that accounts for differences in an etched pattern due to variation in three-dimensional photoresist profile, the model form including both optical and density terms that directly relate to an optical image.

Patent Agency Ranking