公开(公告)号：US20180269297A1

公开(公告)日：2018-09-20

申请号：US15461634

申请日：2017-03-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan ZHANG ,  Frank MONT ,  Mark RAYMOND ,  Chengyu NIU

IPC: H01L29/45 ,  H01L29/66 ,  H01L21/28 ,  H01L29/08 ,  H01L21/768 ,  H01L21/285 ,  H01L29/78 ,  H01L29/417

CPC classification number: H01L29/45 ,  H01L21/28008 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76889 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66795 ,  H01L29/7851

Abstract: A conductive source/drain contact is formed within a trench overlying a raised epitaxial source/drain junction. The conductive contact includes a conductive liner and a conductive fill material formed directly over the conductive liner. The conductive fill material is selected from a platinum group metal such as ruthenium. The conductive liner may be directionally deposited into the trench and is adapted to form a metal silicide in situ through a reaction with the epitaxial layer.