公开(公告)号：US09916415B2

公开(公告)日：2018-03-13

申请号：US15095239

申请日：2016-04-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Frederick G. Anderson ,  Michael L. Gautsch ,  Jean-Marc Petillat ,  Philippe Ramos ,  Randy L. Wolf ,  Jiansheng Xu

IPC: G06F17/50 ,  H01L27/12

CPC classification number: G06F17/5081 ,  G06F17/5009 ,  G06F17/5036 ,  G06F2217/12 ,  G06F2217/84 ,  H01L27/1211

Abstract: Disclosed are embodiments for modeling integrated circuit (IC) performance. In these embodiments, a parasitic extraction process is performed to generate a netlist that, not only accounts for various parasitics within the IC, but also accounts for substrate-generated signal distortions (e.g., substrate-generated harmonic signal distortions) that occur within the IC. During this netlist extraction process, the design layout of the IC is analyzed to identify parasitics that are to be represented in the netlist and to also identify any circuit elements with output signals that are subject to substrate-generated signal distortions. When such circuit elements are identified, signal distortion models, which were previously empirically determined and stored in a model library, which correspond to the identified circuit elements, and which account for the signal distortions, are selected from the model library and incorporated into the netlist. Simulations are subsequently performed using this netlist to generate a performance model for the IC.

公开(公告)号：US20170147726A1

公开(公告)日：2017-05-25

申请号：US15418015

申请日：2017-01-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Frederick G. Anderson ,  Nicholas T. Schmidt

IPC: G06F17/50

CPC classification number: G06F17/5036 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/38 ,  G06F2217/80 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/16152

Abstract: A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.

公开(公告)号：US09971859B2

公开(公告)日：2018-05-15

申请号：US15418015

申请日：2017-01-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Frederick G. Anderson ,  Nicholas T. Schmidt

IPC: G06F17/50

CPC classification number: G06F17/5036 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/38 ,  G06F2217/80 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/16152

Abstract: A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.

公开(公告)号：US09582621B2

公开(公告)日：2017-02-28

申请号：US14748595

申请日：2015-06-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Frederick G. Anderson ,  Nicholas T. Schmidt

IPC: G06F17/50

CPC classification number: G06F17/5036 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/38 ,  G06F2217/80 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/16152

Abstract: A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.

Abstract translation: 考虑到从芯片背面的低效散热，模拟了由于与其他装置的自热和热耦合而导致的集成电路芯片上的器件的温度变化。 为了执行这种建模，必须使用测试集成电路（IC）芯片来预定假想热量与IC芯片上不同位置的实际热量的比率。 在测试期间，选择在测试IC芯片上的一个特定位置处的一个测试装置用作热源，而在测试IC芯片上的其他位置处的至少两个其它测试装置用作温度传感器。 热源被偏压，确定了热源和传感器处的温度变化。 这些变化用于计算与特定位置相关联的假热量与实际热量比的值。