公开(公告)号：US09406790B2

公开(公告)日：2016-08-02

申请号：US14505018

申请日：2014-10-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  James J. Demarest ,  Balasubramanian S. Haran

IPC: H01L29/66 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/06 ,  H01L21/308 ,  H01L29/423 ,  H01L29/786 ,  B82Y40/00 ,  H01L21/02 ,  B82Y99/00

CPC classification number: H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3086 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78696 ,  Y10S977/938

Abstract: A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the first spacers as an etch mask. A second spacer is formed on sidewalls of the first spacer and vertical portions of the epitaxial semiconductor layer. Horizontal bottom portions of the epitaxial semiconductor layer are etched from underneath the vertical portions of the epitaxial semiconductor layer to form a suspended ring-shaped semiconductor fin that is attached to the mandrel. A center portion of the mandrel is etched employing a patterned mask layer that covers two end portions of the mandrel. A suspended semiconductor fin is provided, which is suspended by a pair of support structures.

Abstract translation: 具有垂直平面的心轴形成在单晶半导体层上。 通过选择性外延在单晶半导体层上形成外延半导体层。 围绕心轴的上部形成第一间隔件。 使用第一间隔物作为蚀刻掩模，外延半导体层垂直凹入。 在第一间隔物的侧壁和外延半导体层的垂直部分上形成第二间隔物。 从外延半导体层的垂直部分的下方蚀刻外延半导体层的水平底部部分，以形成附接到心轴的悬挂的环形半导体鳍片。 使用覆盖心轴的两个端部的图案化掩模层来蚀刻心轴的中心部分。 提供悬挂的半导体鳍片，其由一对支撑结构悬挂。