公开(公告)号：US20180226505A1

公开(公告)日：2018-08-09

申请号：US15424379

申请日：2017-02-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jiseok KIM ,  Hiroaki NIIMI ,  Hoon KIM ,  Puneet Harischandra SUVARNA ,  Steven BENTLEY ,  Jody A. FRONHEISER

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/36

CPC classification number: H01L29/7827 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/41741 ,  H01L29/66666 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78642

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertical transport field effect transistor devices and methods of manufacture. A structure includes: a vertical fin structure having a lower dopant region, an upper dopant region and a channel region between the lower dopant region and the upper dopant region; and a doped semiconductor material provided on sides of the vertical fin structure at a lower portion. The lower dopant region being composed of the doped semiconductor material which is merged into the vertical fin structure at the lower portion.