公开(公告)号：US09373580B2

公开(公告)日：2016-06-21

申请号：US14140060

申请日：2013-12-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC: H01L21/00 ,  H01L23/522 ,  G03F7/00 ,  G03F7/09 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

Abstract: A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

Abstract translation: 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。