公开(公告)号：US10446484B2

公开(公告)日：2019-10-15

申请号：US15801501

申请日：2017-11-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Jochonia N. Nxumalo ,  Joyce C. Liu ,  Sami Rosenblatt ,  Chandrasekharan Kothandaraman

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.

公开(公告)号：US09953900B2

公开(公告)日：2018-04-24

申请号：US15083914

申请日：2016-03-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Sami Rosenblatt ,  Michael S. Cranmer ,  Chandrasekharan Kothandaraman

IPC: H01L21/326 ,  H01L23/48 ,  H01L21/768 ,  H01L21/66

CPC classification number: H01L23/481 ,  H01L21/326 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34

Abstract: Device structures involving a conductor-filled via or trench, methods of forming such device structures, and methods of operating such device structures. A doped region is formed in the substrate. An opening, such as a via or trench, is formed that extends through the doped region and into a portion of the substrate beneath the doped region. A conductive plug in formed in the opening to provide the conductor-filled via or trench. The opening is positioned and dimensioned relative to a position and dimensions of the doped region to divide the doped region into a first section and a second section that is disconnected from the first section by the opening.

公开(公告)号：US20170287812A1

公开(公告)日：2017-10-05

申请号：US15083914

申请日：2016-03-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Sami Rosenblatt ,  Michael S. Cranmer ,  Chandrasekharan Kothandaraman

IPC: H01L23/48 ,  H01L21/326 ,  H01L21/66 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/326 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34

Abstract: Device structures involving a conductor-filled via or trench, methods of forming such device structures, and methods of operating such device structures. A doped region is formed in the substrate. An opening, such as a via or trench, is formed that extends through the doped region and into a portion of the substrate beneath the doped region. A conductive plug in formed in the opening to provide the conductor-filled via or trench. The opening is positioned and dimensioned relative to a position and dimensions of the doped region to divide the doped region into a first section and a second section that is disconnected from the first section by the opening.

公开(公告)号：US09847290B1

公开(公告)日：2017-12-19

申请号：US15375924

申请日：2016-12-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Jochonia N. Nxumalo ,  Joyce C. Liu ,  Sami Rosenblatt ,  Chandrasekharan Kothandaraman

IPC: H01L21/768 ,  H01L29/40 ,  H01L29/45 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.