公开(公告)号：US09497027B2

公开(公告)日：2016-11-15

申请号：US14293306

申请日：2014-06-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiang Chen ,  Derek H. Leu ,  Toshiaki Kirihata ,  Sami Rosenblatt

IPC: G06F11/30 ,  H04L9/32 ,  G11C16/04 ,  G11C17/16 ,  G06F12/14 ,  G09C1/00 ,  G11C7/24 ,  G11C11/56

CPC classification number: H04L9/3278 ,  G06F12/1408 ,  G06F12/1425 ,  G09C1/00 ,  G11C7/24 ,  G11C11/5692 ,  G11C16/0491 ,  G11C16/22 ,  G11C17/16

Abstract: Described are a hardware encryption engine, and secret key registration and authentication system recoverable binary bit using knowing an initial secret key stored in the master system. The secret key is overwritten in each authentication, updating it to the master and encryption engine independently. The secret key over write command can be preferably given to the chip as a CHG, and the non recoverable binary bit from the sense amplifier is used for response.

Abstract translation: 描述了硬件加密引擎，以及使用知道存储在主系统中的初始秘密密钥的秘密密钥注册和认证系统可恢复的二进制位。 每个身份验证中都会覆盖秘密密钥，将其独立更新为主服务器和加密引擎。 秘密密钥写入命令可以优选地作为CHG被提供给芯片，并且来自读出放大器的不可恢复的二进制位用于响应。

公开(公告)号：US09847290B1

公开(公告)日：2017-12-19

申请号：US15375924

申请日：2016-12-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Jochonia N. Nxumalo ,  Joyce C. Liu ,  Sami Rosenblatt ,  Chandrasekharan Kothandaraman

IPC: H01L21/768 ,  H01L29/40 ,  H01L29/45 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.

公开(公告)号：US10446484B2

公开(公告)日：2019-10-15

申请号：US15801501

申请日：2017-11-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Jochonia N. Nxumalo ,  Joyce C. Liu ,  Sami Rosenblatt ,  Chandrasekharan Kothandaraman

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.

公开(公告)号：US09953900B2

公开(公告)日：2018-04-24

申请号：US15083914

申请日：2016-03-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Sami Rosenblatt ,  Michael S. Cranmer ,  Chandrasekharan Kothandaraman

IPC: H01L21/326 ,  H01L23/48 ,  H01L21/768 ,  H01L21/66

CPC classification number: H01L23/481 ,  H01L21/326 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34

Abstract: Device structures involving a conductor-filled via or trench, methods of forming such device structures, and methods of operating such device structures. A doped region is formed in the substrate. An opening, such as a via or trench, is formed that extends through the doped region and into a portion of the substrate beneath the doped region. A conductive plug in formed in the opening to provide the conductor-filled via or trench. The opening is positioned and dimensioned relative to a position and dimensions of the doped region to divide the doped region into a first section and a second section that is disconnected from the first section by the opening.

公开(公告)号：US20170287812A1

公开(公告)日：2017-10-05

申请号：US15083914

申请日：2016-03-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Sami Rosenblatt ,  Michael S. Cranmer ,  Chandrasekharan Kothandaraman

IPC: H01L23/48 ,  H01L21/326 ,  H01L21/66 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/326 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34

Abstract: Device structures involving a conductor-filled via or trench, methods of forming such device structures, and methods of operating such device structures. A doped region is formed in the substrate. An opening, such as a via or trench, is formed that extends through the doped region and into a portion of the substrate beneath the doped region. A conductive plug in formed in the opening to provide the conductor-filled via or trench. The opening is positioned and dimensioned relative to a position and dimensions of the doped region to divide the doped region into a first section and a second section that is disconnected from the first section by the opening.