公开(公告)号：US20180096933A1

公开(公告)日：2018-04-05

申请号：US15820602

申请日：2017-11-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Atsushi Ogino ,  Justin C. Long

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L21/311 ,  H01L23/485

CPC classification number: H01L23/5283 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/7688 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238

Abstract: A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.

公开(公告)号：US10403574B2

公开(公告)日：2019-09-03

申请号：US15820602

申请日：2017-11-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Atsushi Ogino ,  Justin C. Long

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485

Abstract: A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.