公开(公告)号：US20200152749A1

公开(公告)日：2020-05-14

申请号：US16742981

申请日：2020-01-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Guowei XU ,  Keith TABAKMAN ,  Viraj SARDESAI

IPC: H01L29/417 ,  H01L27/088 ,  H01L21/768 ,  H01L21/311 ,  H01L21/28 ,  H01L29/66

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and/or drain metallization features, and separated from the gate structures by the spacers.

公开(公告)号：US20190221650A1

公开(公告)日：2019-07-18

申请号：US15873565

申请日：2018-01-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Guowei XU ,  Keith TABAKMAN ,  Viraj SARDESAI

IPC: H01L29/417 ,  H01L21/768 ,  H01L21/311 ,  H01L27/088 ,  H01L21/28

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and/or drain metallization features, and separated from the gate structures by the spacers.