公开(公告)号：US20210074730A1

公开(公告)日：2021-03-11

申请号：US16561956

申请日：2019-09-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  Siva P. ADUSUMILLI ,  Michel J. ABOU-KHALIL

IPC: H01L27/12 ,  H01L27/02 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L21/3065 ,  H01L29/40 ,  H01L21/762 ,  H01L21/311 ,  H01L21/02 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.